Journal Papers

List of publications in journals during the following years (2006-2014)

Sl.
No

Names of all the authors as they appear in each paper

Title of paper

Name of journal, volume, year and page

1.

Suresh G. Vesalapu, Nandita DasGupta and Shanti Bhattacharya

Digitally Tunable MOEMS Diffraction Gratings

J. Micro/Nanolith. MEMS MOEMS, 13, 013001-1 to 013001-7 (2014)

2.

H.V. B. Achar, S. Sengupta, E. Bhattacharya,

Fabrication of ultrathin silicon nanoporous membranes and their application in filtering industrially important biomolecules

 IEEE Trans. on Nanotechnology, doi 10.1109/TNANO.2013.2262100.
3. Paresh Kumar and                E. Bhattacharya Digital Microfluidics and its integration with a fluidic microreactor J. ISSS Vol. 2 No. 1, pp. 10-19, March 2013.
4. M. S. Veeramani, P. Shyam, N. P. Ratchagar, A. Chadha, E. Bhattacharya, and S. Pavan A miniaturized pH sensor with an embedded counter electrode and a readout circuit IEEE Sensors J. 2013, available on line doi: 10.1109/JSEN.2013.2245032.
5. A. Vijayakumar and S. Bhattacharya Characterization and correction of spherical aberration due to glass substrate in the design and fabrication of Fresnel zone lenses Appl. Opt., 52, No. 24, 5932-5940, (2013)
6. A.Vijayakumar and Shanti Bhattacharya Design, Fabrication and Evaluation of a Multilevel Spiral Phase Fresnel Zone Plate for Optical Trapping: Erratum Appl. Opt., 52, 1148-1148 (2013)
7. A.Vijayakumar and Shanti Bhattacharya Phase shifted Fresnel Axicon Opt. Lett., 37, pp.1980-1982 (2012) (This paper was also listed in the Virtual Journal of Biomedical Optics)
8. M. Lai, G. Sridharan, G. Parish, S. Bhattacharya and A. Keating Multilayer porous silicon diffraction gratings operating in the infrared Nanoscale Research Lett., 7:645 DOI: 10.1186/1556-276X-7-645 (2012)
9. R. Preetha, K. Rani, M.S.S. Veeramani, R.E. Fernandez, H. Vemulachedu, M. Sugan, E. Bhattacharya, A. Chadha Potentiometric estimation of blood analytes – triglycerides and urea: comparison with clinical data and estimation of urea in milk using an electrolyte-insulator-semiconductor-capacitor (EISCAP) Sensors and Actuators B: Chemical, Volume 160, Issue 1, Dec 2011, pp   1439-1443. doi:10.1016/j.snb.2011.10.008.
10. HVB Achar and E. Bhattacharya Nanoporous silicon membrane for biomolecular separation International Journal of Nanoscience (WS) Vol. 10, No. 4 and 5,  2011, pp 793-796. DOI: 10.1142/S0219581X11008915
11. Deepak K Agrawal and Shanti Bhattacharya Integrated Optical and MEMS based Design Process for a Variable Optical Attenuator, Opt. And Lasers in Engg., 49, 848-854 (2011)
12. K.A.G. Prakash, S. Dhabai, E. Bhattacharya and S. Bhattacharya Design and Fabrication of a Micro-mirror for Low Resolution Spectroscopy IEEE Sensors J. Vol. 11, No. 4, pp 1019-1025, April 2011.

13.

N. Bhagirath, E. Kanhere and E. Bhattacharya

MOS capacitor for simple thiol based biosensor applications

 Thin Sol. Films, vol. 519, pp 982–986, Nov 2010.

14.

G.S.Jayadeva and Amitava DasGupta

Analytical Approximation for the Surface Potential in n-channel MOSFETs considering Quantum Mechanical Effects

 IEEE Trans. Electron Devices, pp. 1820-1828, August 2010.

15.

J. Jacob, A. DasGupta, M. Schroter, A. Chakravorty

Modeling Non-Quasi-Static Effects in SiGe HBTs

 IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1559-1566, 2010.

16.

Arvind Ajoy and S.Karmalkar

On a simple scheme for computing the electronic energy levels of a finite system from those of the corresponding infinite system

J. Phys.: Condens. Matter, vol. 22, no. 43, pp. 435502, October 2010.

17.

Rathnamala Rao, Nandita DasGupta and Amitava DasGupta

Study of Random Dopant Fluctuation effects in FD-SOI MOSFET using Analytical Threshold Voltage Model

 IEEE Trans. On Device and Materials Reliability,Vol.10, No.2,pp247-253, June 2010.

18.

S.Sudharsanan and S.Karmalkar

Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors

J. Appl. Phys., vol. 107, pp. 064501-03, March 2010.

19.

V. Hareesh, R. E. Fernandez, E. Bhattacharya and A. Chadha

Miniaturisation of EISCAP sensors for triglyceride detection

 J. of Materials Science: Materials in Medicine (Springer), Volume 20, Supplement 1 / December 2009, p229-234. DOI 10.1007/s10856-008-3534-y.

20.

R. E. Fernandez, S. Stolyarova, A. Chadha, E. Bhattacharya and Y. Nemirovsky

MEMS composite Porous Silicon/Polysilicon cantilevers for biosensing applications

 IEEE Sensors J., Volume 9, Issue 12, Dec. 2009 Page(s):1660 - 1666.

21.

Jaibir Sharma and Amitava DasGupta

Effect of stress on the pull-in voltage of membranes for MEMS application

Journal of Micromech. and Microengg., vol. 19, issue 11, (Article No. 115021), Nov. 2009.

22.

Jaibir Sharma and Amitava DasGupta

Fabrication of reliable RF MEMS switches in CPW configuration

Advanced Materials Research, Vol. 74, pp 259-263, 2009.

23.

S. Bhat and E. Bhattacharya

Extraction of residual stress and dimensions from electrical measurements on surface micromachined test structures, J. Micro/Nanolith

 MEMS MOEMS Vol. 8, 031309 (Jul. 10, 2009).

24.

G.S.Jayadeva and Amitava DasGupta

Compact model of short channel MOSFETs considering quantum mechanical effects

Solid State Electronics, Vol.53, pp.649-657, June 2009.

25.

T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta

Reduced Charge Trapping in GaN MIS using Novel Gate Oxide Deposition Technique

 Electronics Letters, vol.45, issue 10, pp.527-28, May 2009.

26.

Saleem.H and S.Karmalkar

An analytical method to extract the physical parameters of a solar cell from four points on the illuminated J-V curve

IEEE Electron Device Lett., vol. 30, No. 4, pp. 349-352, April 2009.

27.

Rathnamala Rao, Guruprasad Katti, Dnaynesh S. Havaldar, Nandita DasGupta and Amitava DasGupta

Unified Analytical Threshold Voltage Model for Non-uniformly doped Dual Metal Gate Fully Depleted Silicon-On-Insulator MOSFETs

 Solid State Electronics ,vol 53, issue 3, pp 256-65, March 2009.

28.

L. Sujatha and E. Bhattacharya

Porous Silicon/Polysilicon for improved sensitivity pressure sensors

 Phys. Status Solidi C 6, No. 7, 1759- 1762 (2009) / DOI 10.1002/pssc.200881070.

29.

A. Mathew, G. Pandian, A. Chadha, E. Bhattacharya

Novel Applications of Silicon and Porous Silicon Based EISCAP Biosensors

 Phys. Status Solidi A 206, No. 6, 1369-1373 (2009) 009) / DOI 10.1002/pssa.200881084.

30.

R. E. Fernandez, V. Hareesh, E. Bhattacharya and A. Chadha

Comparison of a potentiometric and a micromechanical triglyceride biosensor

 Biosensors and Bioelectronics 24(5), pp1276-1280, 1 Jan 2009.

31.

Rupesh Kumar Navalakhe, Nandita DasGupta, and Bijoy Krishna Das

Fabrication and characterization of straight and compact S-bend optical waveguides on a silicon-on-insulator platform

 Appl. Opt. 48, G125-G130 (2009).

32.

Binsu J Kailath, Amitava DasGupta, Nandita DasGupta, B N Singh and L M Kukreja

Growth of Ultra-thin SiO2 by Laser Induced Oxidation

 Semiconductor Science & Technol. 24 (2009) 105011.

33.

T.Erlbacher, T Graf, Nandita DasGupta, A. J. Bauer and H.Ryssel

Suppression of parasitic electron injection in SONOS-type memory cells using high-k capping layers

 Jl. Vac. Sc. Tech. B, vol. 27, pp.482-485, Jan 2009.

34.

R. Navalakhe, N. Dasgupta, and B.K. Das

Fabrication and characterization of straight and compact S-bend optical waveguides on a silicon-on-insulator platform

 Appl. Opt., 48, G125-130, (2009).

35.

C.A, Shanti Bhattacharya, Anil Prabhakar

Multiwavelength Erbium Doped Fiber Ring Lasers

 Opt. Commun, 282 2380-2387, (2009).

36.

Jaibir Sharma and Amitava DasGupta

A low temperature wet release process for low stiffness structures”, Journal of Micro/Nanolithography

 MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043007-1-5, October-December 2008

37.

S.Bhattacharya

Simplified Mesh Techniques for Design of Beam Shaping Diffractive Optical Elements

 Optik, 119 321-328, (2008)

38.

A. Dey, A. Chakravorty, N. Dasgupta, A. Dasgupta

Analytical Model of Sub-threshold Current and Slope for Asymmetric 4T and 3T Double Gate MOSFETs

 IEEE Trans. Electron Devices, vol. 55, no.12, pp. 3442-3449, Dec 2008

39.

T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta

Reactive ion etching of GaN in SF6 + Ar and SF6 + N2 plasma

 Semicond. Sci. Technol., vol.23, 2008 (Article No. 125019)

40.

Aritra Dey, Anjan Chakravorty, Nandita DasGupta and Amitava DasGupta

Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T Double-Gate MOSFETs

 IEEE Trans. Electron Devices, vol.55, no.12, pp3418-25, December 2008.

41.

Jaibir Sharma and Amitava DasGupta

Extraction of Young's modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams

 Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043020-1-6, October-December 2008

42.

Renny Edwin Fernandez, Enakshi Bhattacharya and Anju Chadha

Covalent immobilization of Pseudomonas Cepacia Lipase on semiconducting materials

 Appl. Surface Science 254, Issue 15 (May 2008) 4512-4519.

43.

S.Karmalkar and Saleem.H

A physically based explicit I-V model of a solar cell for simple design calculations

 IEEE Electron Device Lett., vol. 29, No. 5, pp. 449-451, May 2008.

44.

Sheela Devarajamani  and Nandita DasGupta

Optimization of surface passivation for InGaAs/InP PIN photodetectors using ammonium sulfide

Semicond. Sci. Technol., vol.23, March 2008 (Article No. 035018)

45.

S.Karmalkar and D.Mahaveer Sathaiya

A Closed-form Model for Thermionic-trap-assisted Tunneling

 IEEE Trans. Electron Devices, vol. 55, no.2 , pp.557-564, Feb 2008.

46.

S.Karmalkar and S.Balaji

Improving the Performance of Superjunction Devices having Fixed Charge in Isolation and Termination Oxide Layers

 Trans. Electron Devices, vol. 55, no.1, pp. 446-451, Jan 2008.

47.

L Sujatha and Enakshi Bhattacharya

Enhancement of the sensitivity of pressure sensors with a composite Si/porous silicon membrane

 J. Micromech. Microeng. 17 (2007) 1605-1610.

48.

A. Chakravorty, R. F. Scholz, B. Senapati, R. Garg, C. K. Maiti

Design of Active Inductors in SiGe/SiGe:C Processes for RF Applications

 Int. J. RF and Microwave Computer Aided Engineering, pp. 455-468, 2007.

49.

Binsu J Kailath, Amitava DasGupta and Nandita DasGupta

Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions

IEEE Trans. On Device and Materials Reliability, vol.7, no.4, pp. 602-610, Dec. 2007.

50.

Somashekara Bhat and Enakshi Bhattacharya

Parameter extraction from simple electrical measurements on surface micromachined cantilevers

 J. Micro/Nanolith. MEMS MOEMS 6(4), (Oct–Dec 2007)043013

51.

Souvik Basu, Anil Prabhakar and Enakshi Bhattacharya

Estimation of stiction force from electrical and optical measurements on cantilever beams

IEEE/ASME J. of  MEMS, 2007, Vol. 16, No. 5 (October 2007) 1254-1262.

52.

S. Karmalkar, Vishnu Mohan P. and Hari P. Nayar

Compact Models of Spreading Resistances for Electrical / Thermal Design of Devices and ICs

IEEE Trans. Electron Devices, in press

53.

D. Mahaveer Sathaiya and S. Karmalkar

A model for the high field leakage current in nitrided oxides

Journal of Applied Physics, in press

54.

S. Karmalkar

Introducing the Device Modeling Procedure to Electrical Engineering Students

IEEE Trans. on Education, in press

55.

B. Bindu, Nandita DasGupta and Amitava DasGupta

A unified model for gate-capacitance voltage characteristics and extraction of parameters of Si/SiGe heterostructure PMOSFETs

 IEEE Trans. Electron Devices, vol. 54, pp. 1889 - 1896, August 2007

56.

B. Bindu, N. Lakshmi, K.N. Bhat and Amitava DasGupta

Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOI CMOS technology

Solid-State Electronics, vol. 50, Issue 7-8, pp. 1359-1367, July-August 2006.

57.

Binsu J. Kailath, Amitava DasGupta and Nandita DasGupta

Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide

Solid-State Electronics, in press

58.

Binsu J. Kailath, Amitava DasGupta and Nandita DasGupta

Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide

 Solid State Electronics, Vol.51, pp.762-770, May 2007.

59.

D. Mahaveer Sathaiya and S. Karmalkar

Thermionic Trap – Assisted Tunneling model and its application to leakage current in nitrided oxides and AlGaN / GaN HEMTs

Journal of Applied Physics, vol. 99, no. 8, published online in May 2006

60.

K.N.Bhat, A.DasGupta, P.R.S.Rao, N.DasGupta, E.Bhattacharya, K. Sivakumar, V.Vinoth  Kumar, L.Helen Anitha, J.D.Joseph, S.P.Madhavi and K.Natarajan

Wafer Bonding -A Powerful Technique for MEMS

Indian Journal of Pure and Applied Physics, vol.45, no.4, pp. 311-316, April 2007

61.

P. V. M. Ramanamurthy, R. Ahrens and  S. Karmalkar

Piezoelectric Microvalve

Indian  Jl. of Pure and Appl. Phys., vol. 45, no. 4, pp. 278-281, April 2007

62.

S. Balaji and S. Karmalkar

Effects of Oxide Fixed Charge on the Breakdown Voltage of Superjunction Devices

IEEE Electron Device Lett.,, vol. 28, No. 3, pp. 229-231, March 2007

63.

Naseer Babu P and K. N. Bhat

Tunnel oxide Growth on Silicon with ‘Wet Nitrous Oxide’ Process for Improved Performance Characteristics

IEEE Electron Device Letters, Vol. 27, pp. 881-883, 2006

64.

A. Chakravorty, R. F. Scholz, D. Knoll, A. Fox, B. Senapati, C.K. Maiti

Implementation of a scalable VBIC model for SiGe:C HBTs

Solid State Electronics, pp. 399-407, 2006

65.

K. N. Bhat and Naseer Babu P

Nanometer Scale Tunnel Oxide Fabrication by Wet Nitrous Oxide Process for Non-Volatile memory Applications

IETE Journal of Research and Development, Vol. 52, No.5, pp. 369-377, 2006.

66.

S. Karmalkar and N. Soudabi

A Closed-form Model of the Channel Electric Field Under the Field Plate in a HEMT

IEEE Trans. Electron Devices, vol. 53, pp. 2430-2437, Oct. 2006

67.

Binsu Kailath, Nandita Das Gupta and Amitava Das Gupta

Improvement in the interfacial properties and electrical characteristics of ultra-thin SiO2 by selective anodization

IETE Journal of Research, vol. 52, no.5, September-October 2006, pp. 357 – 363

68.

Dnyanesh S. Havaldar, Nandita DasGupta and Amitava DasGupta

Study of Dual Material Gate FinFET using Three-Dimensional Numerical Simulation

International Journal of Nanoscience, Vol. 5, Nos. 4-5, August & October 2006, pp. 541-546.

69.

Manjula S.R., Teweldebrhan Kifle, E. Bhattacharya and K.N. Bhat

Physical Model for the Resistivity and Temperature Co-efficient of Resisitivity in  Heavily Doped Polysilicon

IEEE Trans. El. Dev. 53, Issue 8 (2006) 1885-1892.

70.

K. N. Bhat, R. Joseph Daniel and Enakshi Bhattacharya

Stable passivation technique for high temperature polycrystalline silicon on insulator (PSOI) MOSFETs for MEMS integration

Electronics Letters 42, Issue 12(2006)721-722.

71.

V. Vinoth Kumar, A. DasGupta, K.N. Bhat and K. Natarajan

Process Optimization for monolithic integration of piezoresistive pressure sensor and MOSFET amplifier with SOI approach

Journal of Physics: Conference Series, vol. 34, pp. 210-215, 2006.

72.

K.Sivakumar, N. DasGupta and K.N.Bhat

“Sensitivity Enhancement of Polysilicon Piezoresistive Pressure Sensors with Phosphorus Diffused Resistors

Journal of Physics: Conference Series, vol. 34, pp. 210-215, 2006.

73.

B. Bindu, Nandita DasGupta and Amitava DasGupta

Analytical Model of Drain Current of Si/SiGe Heterostructure p-channel MOSFETs for Circuit Simulation

IEEE Trans. Electron Devices, vol. 53, pp. 1411 - 1419, June 2006

74.

P. Nagaraju and Amitava DasGupta

Study of Gate Leakage Current in Symmetric Double Gate MOSFETs with High-k/Stacked Dielectrics

Thin Solid Films, vol. 504/1-2, pp. 317-320, May 2006

75.

Vaibhav G. Marathe, Yordan Stefanov, Udo Schwalke and Nandita DasGupta

Study of pinholes in Ultrathin SiO2 by C-AFM Technique

Thin Solid Films, Vol.504, Issue1/2, pp. 11-14 May 2006

76.

Vaibhav G. Marathe, Naresh Chandani and Nandita DasGupta,

Effect of Oxidation Temperature on the Quality and Reliability of Ultrathin Gate Oxide

Thin Solid Films, Vol.504, Issue1/2, pp. 126-128, May 2006

77.

Dnyanesh S. Havaldar, Guruprasad Katti, Nandita DasGupta and Amitava DasGupta

Subthreshold current and threshold voltage model of FinFETs based on analytical solution of 3-D Poisson equation

IEEE Trans. Electron Devices, vol. 53, pp. 737 -742, April 2006

78.

B. Bindu, Nandita DasGupta and Amitava DasGupta

Analytical Model of Drain Current of Strained-Si / Strained-Si1-YGeY / Relaxed-Si1-XGeX NMOSFETs and PMOSFETs for Circuit Simulation

Solid-State Electronics, vol. 50, Issue 3, pp. 448-455, March 2006

79.

S. Karmalkar, Naresh Satyan and D. Mahaveer Sathaiya

On Resolution of the Mechanism for Reverse Gate Leakage in AlGaN / GaN HEMTs

IEEE Electron Device Lett., vol. 28, pp. 87-89, February 2006.

80.

R. Joseph Daniel, K. N. Bhat and Enakshi Bhattacharya

Effect of Doping Concentration on the Grain Boundary Trap Density and Threshold Voltage of Polycrystalline SOI MOSFETs

Microelectronics Engineering 83, Issue 2 (2006) 252-258.