Research and Development: Focus Areas

High Speed Electronic and Optoelectronic Devices

  • GaN, GaAs & InP based BJTs, MOSFETs, HEMTs, LEDs & Photodetectors

Micro Electro Mechanical Systems (MEMS) & Bio-sensors

  • Optical MEMS (Variable Optical Attenuators, Micromirrors)

  • Sensors (Pressure Sensors and Accelerometers)

  • Actuators (Micropumps and microvalves)

  • Extraction of parameters (Young’s modulus, residual stress, stiction force)

  • BioMEMS (Triglyceride and urea sensors)

  • RF MEMS (RF switches and resonators)

  • Microfluidics (Conventional and Digital)

Modelling of Semiconductor Devices

  • Power and high frequency Semiconductor devices (AlGaN/GaN HEMTs with field plates, Superjunction devices,  Power MOSFETs, Spreading resistance modelling)

  • 3-Dimensional modelling for small goemetry devices (SOI MOSFETs, FinFETs)

  • Quantum mechanical modelling – self-consistent solution of Poisson and Schrodinger equations (Resonant Tunneling Diodes, Short Channel MOSFETs)

  • Modelling of Heterostructure devices (HEMTs, Si/SiGe MOSFETs)

  • Compact Modelling (SiGe/SiGe:C HBTs, LD-MOSFETs, CNFETs)

Other Research

  • Polycrystalline, porous and amorphous silicon (Carrier transport in polycrystalline and amorphous silicon thin films, Passivation techniques, Thin film transistors, Sensors)

  • Silicon On Insulator (SOI) MOSFETs and ICs (Technology development, New device concepts)

  • Ultra-thin gate dielectrics for MOSFETs (High-k gate dielectrics, Ultra-thin (<2 nm) SiO2 growth and characterization)