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Research Papers authored/co-authored by Dr K.N. Bhat

Total number of journal and conference papers: 151

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Published in refereed journals: 64

  1. K.N.Bhat, B.R.K.Reddy, V.V.Kumar, K.S.Kumar, Y.Sushma, N.R. Babu and K.Natarajan, "Design Optimization, Fabrication and Testing of a capacitive Silicon Accelerometer using an SOI approach" International Journal of Computational Engineering Science(IJCES) , Voloume 4, Number 3, pp.485-488, September 2003

  2. Vishwanath Krishna Bhat, K.N.Bhat and A. Subrahmaniam, "Effect of oxide growth temperature on the electrical performance of extremely thin (~ 3 nm ) wet oxides of silicon", Material Science and Engineering , Elsevier Science , B98, pp.140-143, 2003

  3. K.N.Bhat ,N.DasGupta, A.DasGupta,P.R.S.Rao, R.Navin Kumar,and Y.Chandana, "Oxidation Process- optimization for large area silicon fusion bonded devices and MEMS structures", in Materials & Process Integration for MEMS , Edited by Francis E.H.Tay, Kluwer Academic Publishers (Boston/Dordrecht/London), pp.135- 156, 2002

  4. K.Remashan and K.N.Bhat , "Stable Gallium Arsenide MIS Capacitors and MIS Field Effect Transistors by (NH4)2Sx treatment and hydrogenation using plasma deposited silicon nitride gate insulator", IEEE Transactions on Electron Devices (USA) , Vol49, No3 , pp 343-353, March 2002

  5. K.Remashan and K.N.Bhat , "Combined effect of (NH4)2Sx treatment and post-metallization annealing with plasma-enhanced chemical vapour depoaition silicon nitride gate dielectric on the GaAs metal-insulator-semiconductor characteristics and the photoluminescence characteristics of GaAs substrates", Semiconductor Science and Technology(UK) Vol17. pp1-6, 2002

  6. Robert B.Darling , Adi A.Scheidemann, K.N. Bhat, T.C.Chen ,"Micromachined Faraday Cup Array using Deep Reactive Ion Etching" , Sensors and Actuators A (USA) Vol 95 , pp.84-93, January2002

  7. V.K.Bhat, K.N.Bhat and A. Subrahmanyam, "Electrical Characterization of ultrathin oxides of silicon grown by wet oxidation at 800°C", Solid State Electronics Vol.45, pp.1127-1135, August 2001

  8. V.K.Bhat, K.N.Bhat and A. Subrahmanyam, "Growth of ultrathin oxides of silicon by wet oxidation at very low (0.04atm) water vapour pressure", Semiconductor Sci. Technol. vol.16, p1-5, 2001

  9. S.Das, R.Sriram, K.N.Bhat and P.R.S.Rao, "Effects of Deposition and annealing conditions on the structure and electrical properties of LPCVD silicon thin films", Journal of Materials Science (USA),Vol.35, pp.4743-4746,2000

  10. V.K.Bhat, K.N.Bhat and A.Subramayam, "Effect of post- Oxidation annealing of the oxynitride on the C-V and G-V characteristics of Al/thin oxynitride/n-Si tunnel diodes", Semiconductor Science and Technology (UK),Vol15, 883-887,September 2000

  11. V.K.Bhat, K.N.Bhat and A.Subramanyam, "Electrical Characterization of ultrathin oxides of silicon grown by N2O plasma assisted oxiation", Journal of Electronic Materials (USA) ,Vol.29.pp.399-404, April 2000

  12. V.K.Bhat, K.N.Bhat and A.Subramanyam,"Electrical Characterization of extremely thin (2.7nm) oxynitride and oxide of silicon grown by N2O plasma and wet oxidation at low temperatures: A Comparison", Japanese Journal of Applied Physics(Japan), Pt2, Vol.39, pp.L159-L162, February 2000

  13. Vishwanath Krishna Bhat, M. Pattabiraman, K.N.Bhat and A.Subramanym, "The growth of ultrathin of silicon by low temperature wet oxidation technique", Materials Research Bulletin(USA), Vol.34,pp.1797-1803, Oct/Nov 1999

  14. Vishwanath Krishna Bhat , K.N.Bhat, A. Subramanyam, "Effect of pre-oxidation surface preparation on the growth of ultrathin oxides of silicon", Semiconductor Science and Technology(UK) , Vol.14,pp.705-709, August 1999

  15. K.Remashan and K.N.Bhat, "GaAs Metal Insulator Field Effect Transistors with excellent intrinsic transconductance and stable drain currents using (NH4)2Sx chemical treatment", IEEE Electron Device Letters , Vol.19, pp.466-468, December 1998

  16. K.N. Bhat, P.R.S. Rao, J. Vijayakumar, S. Seetharaman, K. Gopinath and K.S. Chari, "Development of Automated High Pressure Oxidation Systems (HIPOS)", Special Issue of IETE Technical Review (India) on Microelectronics Instrumentation Vol.15, pp27-35,Jan-April 1998.

  17. K.N. Bhat, "Micromachining for Micro Electromechanical Systems", tDefence Science Journal (India) Special Issue on Futuristic Technologies on Semiconductors, Vol.48, pp.5-19, January 1998.

  18. A.V.N.Tilak and K.N.Bhat "Electrical and Photovolatic Characteristics of Poly-emitter Solar Cells" Thin Solid Films (Europe), Vol 312 ,pp.273-279,January 1998

  19. V. Devnath, K.N. Bhat and P.R.S. Rao, "Stable InP MIS Device using silicon nitride/Anodic oxide Double-layer Dielectric", IEEE Electron Device Lett. (USA) vol 18, pp 114-116, March 1997.

  20. S. Chatterjee, K.N. Bhat and P.R.S. Rao, "The Effect of a cap layer on the diffusion of Zinc from doped silica films in Gallium Arsenide" Solid State Electronics (UK), vol 41 pp 496-500, March 1997.

  21. A.V.N. Tilak and K.N. Bhat "Effect of poly thickness and substrate doping on the electrical characteristics of polyemitter n+p junctions", Solid State Electronics (UK), vol 41, No. 6, pp. 909-912, June 1997.

  22. K.N. Bhat, "Recent Advances in Insulated Gate Technology for GaAs and InP MISFETs" Special Issue of IETE, Technical Review (India) on "Micro wave and mm wave devices", vol 14, No. 6, pp. 387-396, November-December 1997

  23. K.N. Bhat, M.C. Ramesh, P.R.S. Rao and B. Ganesh, "Polysilicon Technology" IETE Journal of Research (India), Special Issue of Technical Review on "Materials for Electronics", vol 43, Nos. 2 and 3, pp. 143-154, March-June,1997.

  24. P.R.S. Rao, K. Remashan, K.R. Suryaprasad, K.N. Bhat and K.S. Chari, "Optimization of PECVD silicon nitride for silicon MIS devices with low interface state density", Solid State Electronics (UK), vol 39 pp 1808-1810, December 1996.

  25. K. Remashan and K.N. Bhat "Silicon nitride / (NH4)2 Sx passivation of n-GaAs to unpin the Fermi level", Electronics Letters (UK), vol 32, No. 7, pp 694-695, 28th March 1996.

  26. Basavana Goud and K.N. Bhat, "Analysis and Optimal Design of Semi-Insulator Passivated High-Voltage Field Plate Structures and Comparison with Dielectric passivated structures", IEEE Transactions on Electron Devices (USA), vol 41, No 10, pp 1856-1865, October 1994.

  27. C.B. Goud and K.N. Bhat, "Breakdown voltage of Field plate and Field-Limiting Ring Techniques: Numerical Comparison", IEEE Transactions on Electron Devices (USA), vol. 39, No. 7, pp 1768-1770, July 1992.

  28. K.N. Bhat and Nandita Basu, "Surface Passivation Technology for GaAs", Journal of IETE (India), Vol. 38, pp 85-92, March-June, 1992.

  29. S. Karmalkar and K.N.Bhat, "The shifted-Rectangle Approximation for Simplifying the Analysis of Ion-Implanted MOSFETs and MESFETs", Solid State Electronics (UK), vol. 34, No. 7, pp 681-692, July 1991.

  30. S.Karmalkar and K.N.Bhat, "The Remote-Base Transistor Biasing Scheme of the Thyristor for Three-Terminal Measurement of Base parameters", Solid State Electronics (UK), vol. 34, No. 6, pp. 613-615, June 1991.

  31. C.B. Goud and K.N. Bhat, "Two-Dimensional Analysis and Design Considerations of High-voltage Planar Junctions Equipped with Field Plate and Guard Ring", IEEE Transactions on Electron Devices (USA), vol. 38, No 6, pp. 1497-1504, June 1991.

  32. M. Jagadeesh Kumar and K.N. Bhat, "Collector Recombination Life-time from the Quasi-saturation Analysis of High voltage Bipolar Transistors", IEEE Transactions on Electron Devices (USA), vol 37, No 11, pp 2395-2398, November 1990.

  33. C. Mallikarjun and K.N. Bhat, "Numerical and Charge Sheet Models for Thin-film SOI MOSFETs", IEEE Transactions on Electron Devices (USA), vol 37, No 9, pp 2037-2051, September 1990.

  34. K.N. Bhat , "LPCVD SOI MOSFET Technology for 3D Integration", Journal of Electronics & Telecommunication Engineers, (India) (Special issue on Microelectronics), vol. 36 No 3&4, pp 139-149, May-August 1990.

  35. M. Jagadeesh Kumar and K.N. Bhat "The Effect of Emitter Region Recombination on the collector Lifetime and the current gain of High voltage Bipolar Transistors", IEEE Transactions on Electron Devices, (USA), vol. ED-36, pp 1803-1810, September 1989.

  36. S. Karmalkar and K.N. Bhat, "A process-parameter-Based circuit Simulation Model for Ion-implanted MOSFETs and MESFETs", IEEE Journal of Solid State Circuits (USA), vol. SC-24, pp 139-145, February 1989.

  37. S. Karmalkar and K.N. Bhat, "A Simple C-V method to extract the correct Equivalent Box and Gaussian representations in BC MOSFETs", Solid State Electronics (USA), vol. 31, pp. 1567-1577, November 1988.

  38. Nandita Basu and K.N. Bhat, "High-Pressure Thermal Oxidation of n-GaAs in an Atmosphere of Oxygen and Water vapour", J. Applied Physics (USA), vol. 63, pp. 5500-5506, June 1988.

  39. Nandita Basu and K.N. Bhat, "High-Pressure Oxidation of <100> Silicon for Production of Ultrathin-Oxide-MIS Diodes", Thin Solid Films (UK), vol. 156 No.2, pp. 243-257, February, 1988.

  40. K.N. Bhat and Nandita Basu, "High Pressure Thermal Oxidation ofGallium Arsenide at 250C", Electronics Letters. (UK), vol.23, pp. 1329-1330, November 1987.

  41. S. Karmalkar and K.N. Bhat, "The correct Equivalent Box Representation for the Buried Layer of BC MOSFETs in terms of the Implantation Parameters", IEEE Electron Devices Letters (USA) EDL-8, pp- 457-459, October 1987.

  42. K.Sukulal and K.N. Bhat, "Role of Life-time, bandgap narrowing in Diffused-junction Silicon solar cells", IEE Proceedings (UK), vol. 134, No.4, pp. 249-258, August 1987.

  43. C.B. Goud and K.N. Bhat, "On the choice of appropriate ionization coefficients for breakdown voltage calculations", Solid-State Electronics (UK), vol.30, pp. 787-792, August 1987

  44. K.N. Bhat, M. Jagadeesh Kumar, V. Ramasubramanian and P. George, "The Effects of Collector Life-time on the Characteristics of High voltage power Transistors Operating in the Quasi-saturation Region", IEEE Transaction on Electron Devices (USA), vol. ED-34, pp. 1163-1169, May 1987.

  45. Rao P.R.S. K.N. Bhat and K.R.Rao, "High-sensitivity MOS varactor", Solid State Electronics (USA), vol.29, No 11, pp 1137-1144, November 1986.

  46. K.Sukulal and K.N. Bhat., "Current Gain of Narrow-base Transistors", Solid-State Electronics (USA), vol. 29, No. 3, pp 311-316 March 1986.

  47. K.Sukulal and K.N. Bhat, "Effects of emitter-base junction gradation on the minority carrier transport in the base region of bipolar transistors", Journal of Applied Physics (USA), vol. 60, pp. 3759-3764, October 1985.

  48. C.Basavana Goud and K.N. Bhat "Effects of Lateral curvature on the Breakdown voltage of planar Diodes", IEEE Electron Device Letters (USA), vol. EDL-6, pp. 276-278, June 1985.

  49. M.Jagadeesh Kumar C.R. Selvakumar, V. Ramamurthy and K.N. Bhat., "On the dominant Recombination level of platinum in silicon", Physica Stata Solidi (UK), vol. 87, pp 651-655, February 1985.

  50. K.N. Bhat and K. Sukulal "Boundary condition on the minority carrier concentrations of graded PN junctions", Applied Physics Letters (USA), pp 1118-1120, November 1984.

  51. V.Ramamurthy, K.N. Bhat, and D. Kakati, "Computer-aided thermal analysis of reverse-biased PIN diodes", IEE Proceedings, vol. 131, part I, No.3, pp 82-86, June 1984.

  52. I.Bhat, K.N. Bhat., G. Mathur, Borrego. J.M. and S.K. Ghandhi, "Diffused junction P+N Solar cells in bulk GaAs Part-I, Solid State Electronics(UK), vol. 27, pp 121-125, February, 1984.

  53. P.Kwan, K.N. Bhat, J.M. Borrego, and S.K.Ghandhi, "Ion cleaning Damage on (100) GaAs, and its Effect on Schottky Diodes", Solid State Electronics (UK)., vol 26, No. 2, pp 125-129, February 1983.

  54. S.K. Ghandhi, P. Kwan, K.N. Bhat and J.M. Borrego, "Ion Beam Damage Effects during Low Energy cleaning of GaAs", IEEE Electron Device Letters (USA), vol. EDL-3, pp 48-50, February 1982.

  55. P. Das, S.N. Chakravarti, and K.N. Bhat., " Characteristics of GaAs-anodic metal-oxide-semiconductor solar cells", J. Applied Physics (USA), vol. 52(3), pp 1605-1607, March 1981.

  56. S.N. Chakravarti, P. Das, R.T. Webster and K.N. Bhat, "CW Argon Laser Annealing of Anodic oxide on GaAs", J. Applied Physics (USA), vol. 52(2), pp 1132-1133, February 1981.

  57. A.S. Weiner D.H. Reep, S.K. Shastry, K.N. Bhat, J.M. Borrego and S.K. Ghandhi, "Evaluation of n-GaAs Polycrystalline Layers for solar cells using an Electro Chemical Technique", IEEE Transactions on Electron Devices (USA), vol. ED-27, pp 2281-2285, December 1980.

  58. V. Anantharam and K.N. Bhat., "Analytical solutions for the Breakdown voltages of punched-Through diodes having curved junction Boundaries at the edges' IEEE Transactions on Electron Devices (USA), vol. ED-27, pp. 939-945, May 1980.

  59. V. Anantharam and K.N. Bhat., "Current Gain in Bipolar Transistors with a field plate over the base surface", IEE Proceedings (UK), vol. 127, part I, No.1, pp 15-19, February 1980.

  60. K.N. Bhat and J.M. Borrego "Determination of Excess carrier lifetime of p-i-n diodes from the r.f. resistance at microwave frequencies", IEE Journal of Solid State and Electron Devices (UK), vol. 1, No. 3, pp 69-72, April 1977.

  61. K.N. Bhat and M.K. Achuthan, "Transverse Diffusion in Planar Transistors", IEEE Transactions on Electron Devices, (USA) vol.ED-25, pp 57-60, Jan 1978.

  62. K.N. Bhat., and M.K. Achuthan, "Current-Gain Enhancement in Lateral PNP Transistors by an optimized Gap in n+ Buried Layer", IEEE Transactions on Electron Devices (USA), vol. ED-24, pp 205-214, March 1977.

  63. K.N. Bhat., "A simple method of Bipolar Transistor Field Factor Measurement", Proceedings of the IEEE. (USA), vol. 63, pp. 828-829, May 1975.

  64. M.K Achuthan and K.N. Bhat. "Effects of Base Geometry on volume Recombination in Transistor Base and Transistor current-gain Factor", International Journal of Electronics, (London), vol. 37, pp 177-197, August 1974.

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Presented in Conferences: 87

  1. K.N.Bhat, "Micromachined Polysilicon Piezo-resistive Pressure Sensors with SOI approach for the Diaphragm", (Invited Talk), International Workshop on 'Recent Advances in Smart Structures and Technology', December 22, 2004, Indian Institute of Science, Bangalore-12, India.

  2. K.N.Bhat, "Silicon on Insulator (SOI), for Microelectronics and MEMS", December 21, 2004 presented at the Society for Integrated Circuit Technology and Applied Research (SITAR), Bangalore, India.

  3. K.N.Bhat, "Optimally doped Poly silicon Piezoresistive pressure sensors arranged on SOI membrane for best sensitivity and high temperature operation", (Invited Talk), Joint Indo-US Workshop on 'Advanced Sensing Systems and Smart Structures Technology', December 20, 2004, held at the Hotel Renaissance, Powai, Mumbai, India.

  4. K.N.Bhat, "Silicon Micromachining and SOI Technology for Pressure Sensors", (Invited Talk), International Symposium on Smart Materials and Systems, ISSS & Velammal Engineering College, Chennai, December 15-17, 2004.

  5. K.N.Bhat, "Silicon on Insulator (SOI) for VLSI and MEMS", (Invited Talk), Indo-Japan Workshop on Crystal Growth and Applications of Advanced Materials for Optoelectronics held at Anna University, Chennai, India, December 7-10, 2004.

  6. K.N.Bhat, "Silicon Micromachining for MEMS" (keynote talk), 6th International Conference on Electronic Material and Packaging (EMAP 2004) organized by IEEE and University Science Malaysia at The Bay view Beach Resort, Batu Feringhi, Penang, Malaysia, December 5-7, 2004.

  7. K.N.Bhat, "MEMS and NEMS Technology", (Invited Talk), Technology Appreciation Programme on Nanotechnology for Industries, IC 7 SR, Indian Institute of Technology Madras, Chennai, India, December 3, 2004.

  8. K.N.Bhat, "Silicon on Insulator (SOI): A Powerful Technology for VLSI and MEMS" (Invited Talk), IMAPS India National Conference 2004. "IINC-2004", Hotel The Capitol, Bangalore, India, November 28, 2004.

  9. K.N.Bhat, "Micromechined Sensors with SOI approach", (Invited Talk), National Symposium on Acoustics NSA-2004 & Workshop on MEMS technology and Active noise Control, Sri Jayachandrarajendra College of Engineering, Mysore, India, November 27, 2004.

  10. K.N.Bhat, "MEMS, MOEMS & Related Technologies", (Invited Talk) Workshop II in the IMAPS India National Conference 2004, "IINC-2004", Hotel The Capitol, Bangalore, India, November 26, 2004.

  11. K.N.Bhat, "Silicon on Insulator (SOI) Material for VLSI and MEMS", (Invited), Refresher Course on 'Recent Trends in Crystal growth and characterization', Anna University, Chennai, India, November 19, 2004.

  12. K.N.Bhat, "Materials for MEMS and High Speed Devices", (Invited), Refresher Course on 'Recent Trends in Crystal growth and Characterization', Anna University, Chennai, India, November 18, 2004.

  13. K.N.Bhat, "MEMS and Microelectronics R & D Activities at IIT Madras", Workshop on Nanotechnology, held at IIT Madras, Chennai, India, November 4, 2004.

  14. K.N.Bhat, "MEMS and its Applications" Tutorial lecture of three hours duration presented in the Second Annual Symposium - TECIT 2004 ( Trends in Electrical & Electronics , Communication and Information Technologies) held at the Centre for Electronics Design and Technology (CEDT) , Indian Institute of Science, Bangalore, during Feruary 26-27, 2004.

  15. K.N.Bhat, "MEMS Materials and Applications" Presented in the International Workshop on Crystal Growth and Characterization of Technologically Importatnt Materials, Cryatal Growth Centre , Anna University Cennai, Feruary 24-28, 2004

  16. K.N.Bhat, E. Bhattacharya, A.DasGupta, N.Dasgupta, P.R.S.Rao,V.Vnoth Kumar, K.Sivakumar, S.R.Manjula, S.P. Madahvi, Y.Sushma,R.J.Daniel, "Silicon Fusion Bonding and SOI Technology for Micromachined Pressure Senaors and Accelerometers", Proceedings (in CD) pp1-9, Natioinal Workshop on MEMS for Aerospace Applications (MEMSPACE-2004) , held at VSSC , ISRO, Trivandrum, January 16-17, 2004

  17. K.N.Bhat, "Micromachining and MEMS" (Invited Talk ) , Proceedings of the National Conference on MEMS and NanoTechnology , Vellore Institute of Technology, Vellore, pp 232-247 , February28 and March 1, 2003

  18. K.N.Bhat, E.Bhattacharya, A.DasGupta, B.R.KotiReddy, P.R.S.Rao and Krishnan Balasubramaiam, "Polysilicon Piezoresistive pressure sensor using Siloicon-On-Insulator (SOI) approach" (Invited talk by K.N.Bhat) .Proceedings of International Conference on Smart Materials , Structures & Systems (ISSS-SPIE-2002) ,December 12-14, pp.798-807, 2002

  19. Robert B. Darling, Tai-Chang Chen, Adi A.Scheidemann, Paul Yager and K.N.Bhat, (Invited talk by Robert B. Darling ) "Micromachined Components for Miniaturized Chemical analysis Systems", Proceedings of International Conference on Smart Materials , Structures & Systems (ISSS-SPIE-2002) ,December 12-14, pp.808-817, 2002

  20. B.R.KotiReddy, P.R.S.Rao, A.DasGupta and K.N.Bhat, "Silicon-On-Insulator (SOI) wafer fabrication for MEMS application", Proceedings of International Conference on Smart Materials , Structures & Systems (ISSS-SPIE-2002) ,December 12-14, pp.785-790, 2002

  21. Enakshi Bhattacharya, U.Venu Babu, L.Helen Anita Rani, P.Pradeep, P.R.S.Rao and K.N.Bhat. "Contact angle measurements on Polysilicon for Surface Micromachining Applications", Proceedings of International Conference on Smart Materials, Structures & Systems (ISSS-SPIE-2002) ,December 12-14, pp.317-322, 2002

  22. K.N.Bhat, "MEMS and Nanotechnology" (Invited talk) National Symposium on Instrumentation (NSI-27) , Instrumernytation Society of India Dept of Instrumentation, IISC Bangalore and Bharatiyar University Coimbatore , November 27-29, Page I-1, 2002

  23. K.N.Bhat, "MEMS ,pressure sensors and accelerometers", one day tutorial on 21,March 2001 as a part of Continuing Education Program (CEP) course offered to DRDO labs on "MEMS and their applications" organized by Centre for Airborne systems (CABS) , Defence R&D Organisation, Bangalore, March 18-22, 2002 (Invited Tutorial)

  24. K.N.Bhat, "MEMS research activity at IIT Madras" Indo-Japan Workshop on MEMS, March 11,2002 , IISc , Bangalore (Invited Talk )

  25. K.N.Bhat "Unit Structures and Technologies for Physical MEMS" in the one day Tutorial on "MEMS: Technology, Design, CAD and Applications" organized by the Joint Asia South Pacific Design Automation Conference and International Coference on VLSI Design in the 15th International Conference on VLSI Design , January 7-11, 2002, Bangalore.(Invited Tutorial)

  26. K.N.Bhat, N.Lakshmi and A.DasGupta, "SOI Technology, Devices and Characterization", (Invited Talk by K.N.Bhat ) Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices (IWPSD) Vol.1 , pp 576-583, Dec 11-15, 2001, Delhi, Edited by Vikram Kumar and P.K.Basu, Allied Publishers 2001

  27. R.B.Darling, K.N.Bhat, A.A.Scheidemann and T.C.Chen, "Microfabricated Ion detectors and sources for chemical analysis" (Invited Talk by R.B.Darling), Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices (IWPSD) Vol.1 , pp 475-480, Dec 11-15, 2001, Delhi (Edited by Vikram Kumar and P.K.Basu, Allied Publishers 2001)

  28. K.N.Bhat, "Micromachining and MEMS", Proceedings of the 2nd SERC School on Precision Engineering, pp119-137, December 4-13, 2001, IIT Madras (Editors: V.Radhakrishn and M.Singaperumal and K. Narayanasamy) . (Invited Talk )

  29. K.N.Bhat, "Effects of Radiation on MEMS having SOS/MOS structures", Workshop for Microtron Users, October 24-25, 2001, Mangalore University. Mangalore(Invited Talk )

  30. K.N.Bhat, N. DasGupta, A.DasGupta, P.R.S.Rao and R.Navin Kumar, "Oxidation process-optimization for large areasilicon fusion bonded devices and MEMS structures", Proc. of the International MEMS Workshop , July 2001, Singapore, pp279-285

  31. Robert B. Darling, Adi A.Scheidemann, K.N.Bhat and Tai-Chang Chen, "Micromachined Faraday Cup Array Using Deep Reactive Ion Etching", Proceedings of 14th IEEE International Conference on Micro Electro Mechanical Systems,(MEMS 2001),pp.90-93, Interlaken ,Switzerland, January 21-25, 2001

  32. PeterO.Lauritzen, G.K.Anderson, P.D.Chandanna Perera, Subramanian R. and K.N.Bhat, "Goals for a basic level IGBT model with easy parameter extraction", IEEE Computers in Power Electronics (COMPEL’2000) Procedings , Virginia Tech,Blacksburg,VA(USA) July 16-18,2000

  33. K.N.Bhat and Remashan, "Stable GaAs MIS capacitors and MISFETs by the (NH4)2Sx treatment and hydrogenation using PECVD silicon nitride gate insulator", Third International conference on the Emerging Microeleectronics & Interconnection Technologies (EMIT-2K), IISc, Bangalore, February22-24 ,2000

  34. Viswanath K.Bhat, K.N.Bhat and A. Subrahmanyam," Frequency Dependence of Accumulation Capacitance of MOS Structure with Ultrathin Oxide Layer",Proceedings of Tenth International Workshop on Physics of Semiconductor Devices (IWPSD),New Delhi ,pp.341-344,Dec14-18,1999.

  35. A.Sudhakar Reddy,P.R.S.Rao, K.N.Bhat and Nandita DasGupta, "Lower leakage and Higher Breakdown Voltage for MNOS(Metal-SiN-SiO2-Si) structure",Proceedings of Tenth International Workshop on Physics of Semicondutor Devices (IWPSD),New Delhi, pp.357-359, Dec14-18,1999.

  36. Bhat Vishwanath Krishna,A.Subrahmanyam and K.N.Bhat,"Effect of pre-oxidation cleaning on the characteristics of Al-thin SiO2-Si tunnel diodes prepared by low temperature, low pressure wet oxidation", Ninth International Workshop on Physics of Semiconductor Devices (IWPSD),New Delhi,Dec16-20,1997.Proceedings-SPIE 1(3316) pp599-602,1998.

  37. K.N.Bhat, P.R.S.Rao and Anil K Panariya, "Polycrystalline Silicon Thin Film Transistors", Physics of Semiconductor Devices, Vol-1, Edited by V.Kumar and S.K. Agarwal, Narosa Publishing House, New Delhi, pp 539-546, 1998 (Invited Talk Presented by K.N.Bhat in the IX International Workshop on Physics of Semiconductor Devices, New delhi, December 16-20, 1997)

  38. K.N.Bhat, "Microelectronics and Microengineering Materials" (Invited Talk), presented in the MRSI, 9th AGM, Madras, Feg. 11-13, 1998 (page vi of the abstracts of the meeting)

  39. K.N.Bhat, P.R.S.Rao, Amitava Das Gupta, Nandita Das Gupta and S. Karmalkar, "Micromachining of Silicon" (Invited Talk presented by K.N.Bhat), Miniaturisation in Aerospace Systems, Proceedings of the seminar (held at RCI, Hyderabad) pp. BII-1 to BII-26, January, 1998

  40. K.N.Bhat, A.DasGupta, N.DasGupta, S.Karmalkar, P.R.S.Rao, Dinesh Prabhu, S.Karthikeyan, P. Banerjee, Vidya Sagar Varma and M. Kannan, "Micromachinined Accelerometer System" (Invited Talk presented by K.N.Bhat and P. Banerjee) Miniaturisation in Aerospace System Proceedings of the seminar (held at RCI, Hyderabad) pp.CVII-1 to CVI-31, January, 1998

  41. K.Remashan and K.N.Bhat "MIS Devices on n-GaAS Using Silicon Nitride/(NH4)2Sx Passivation", Proceedings of the 85th Session of the Indian Science Congress, Hyderabad, Part III ,Young Scientists Abstracts, pp. 36-37, Jan. 1998

  42. K.N.Bhat, "Silicon on Insulator (SOI) Technology and Devices" (Invited Talk Presented at the SERC School on Materials and Advanced Research and Technology (SMART ‘97) 3-17, October 1997 (Published in Materials for Advanced Research and Technology, edited by J. Kumar and C. Subramanian, Crystal Growth Center, Anna Univeristy, Madras, pp. 1-46, 1997)
  43. K.N. Bhat "Micromachining for Micro-sensors and Actuators", (Invited Talk) Proceedings of Three Day Seminar on Mechatronics, pp 3.31-3.39, sponsored by AICTE, held in Mechanical Engineering Department, KREC, Suratkal, March 7-9, 1997.
  44. A.V.N. Tilak and K.N. Bhat, "Effect of Polythickness on the performance of polyemitter solar cells" Symposium on Current Status on solar Energy Material and Systems, Abstracts pp 33-34, Crystal Growth Centre Anna University, Madras (India) Feb 24-25, 1997.

  45. B.R. Bhat, N. Ganesan and K.N. Bhat "Vibration of Seismic Mass-Spring system in a microaccelerometer" (Presented in the PACAM Conference in Puerto Rico in January 1997) Applied Mechanics in the Americas, vol. 4, Mechanics and Dynamics of Solids, edited by L.A. Godoy, M. Rysz and L.E. Suarez, (USA), pp 337-340, 1997.

  46. K.N. Bhat, "Photodetectors" Tutorial lectures on "Optical Sources, Detectors, Modulators and Demodulators", pp 1-40, the International Conference on Fibre Optics and Photonics "PHOTONICS-96", Madras (India), December 9-13, 1996.

  47. K.N. Bhat "Micromachining for Silicon microaccelerometer", (Invited Talk) SPIE's 1996 Symposium on Smart Materials, Structures and MEMS, held at I.I.Sc, Bangalore, December 11-14, 1996.

  48. Deepa Nair J.S., Dinesh Prabhu, P.R.S Rao, A.DasGupta, S. Karmalkar, N. DasGupta, and K.N. Bhat, "Pressure Assisted Fusion bonding of silicon wafers", SPIE's 1996 Symposium on "Smart Materials Structures and MEMS' held in I.I.Sc, Bangalore, Abstract in page 23 of the Souvenir, December 11-14, 1996.

  49. K.N. Bhat "Radiation effects on bipolar and MOS transistors, and solar cells", (Invited Talk) presented in the Microtron Users Meeting held in Mangalore University, Mangalagangotri, December 30-31, 1996.

  50. K.N. Bhat "Benefits of producing thin films and crystals in space", (Invited Talk) Proceedings of the Symposium on 'Low Cost Access to Space' pp 73-91, held at ISRO Satellite Centre, Bangalore, September 6-7, 1996.

  51. K.N. Bhat "Micro Devices and Micromachining" (Invited Talk) Proceedings of the Seminar on Precision Engineering - The key to Competitive Edge, pp 1-20, held at Central Manufacturing Technology Institute (CMTI), Bangalore, Jan 17, 1996.

  52. K.N. Bhat "Studies on the effects of high energy electron irradiation on Semiconductor Device Characteristics" (Invited Talk) Proceedings of the International Conference on R&D Using Electron Accelerators, pp 69-82, Mangalore University, Mangalagangotri September 29-30, 1995.

  53. K.N. Bhat, "Micromachining for Micromechanical Sensors" (Invited Talk) presented in the National convention on Industrial problems in Machines and Mechanisms held at BMS college of Engineering Bangalore, February 24-25, 1995.

  54. K.N. Bhat, "SOI Technology and Applications", (Invited Talk) International School on Advanced Electronic Materials, Crystal Growth Centre, Anna University, Madras (India), Abstracts pp 3-4, February 6-15, 1995

  55. K.N. Bhat and P. Venugopal, "Studies on the Conductivites of heavily doped LPCVD polysilicon films", (Invited Talk) Proceedings of the VII International workshop on Physics of Semiconductor Devices, New Delhi, (India) pp. 271-278, December 1993.

  56. A.V.N. Tilak and K.N. Bhat, "Phosphorus Dopant Profiles and diffusion coefficients in silicon when diffused through LPCVD polysilicon layer", Proceedings of the VII International Workshop on Physics of Semiconductor Devices, New Delhi, (India) pp. 369-371, December 1993.
  57. V.K. Bhasin, K. Remashan, P.R.S. Rao and K.N. Bhat, "Methods to restore the surface properties of silicon subjected to RIE", Proceedings of the VII International Work shop on Physics of Semiconductor Devices, New Delhi, (India) pp. 312-314, December 1993.

  58. K.N. Bhat, "Doping profile by Electrical Method" (Invited Talk Winter School of emerging techniques for characterization of Semiconductor Materials (WSET SM-93) held at IIT Madras (India), Jan 11-22, 1993) Semiconductor Materials Characterization Techniques (Editor : P.R. Vaya), pp 152-160, Narosa Publishing House, Madras, 1993.

  59. M.C. Ramesh and K.N. Bhat, "Resistivity Model and its application for Determining Phosphorus Diffusivity in LPCVD polycrystalline silicon", Seminar on Physics and Technology of Semiconductor Devices, held at CEERI, Pilani, (India) September 21-22, 1992.

  60. C. Basavana Goud and K.N. Bhat, "Modelling and Optimisation of semi-insulator passivated High-voltage field plate devices", Proceedings of IV International Symposium on Power Semiconductor Devices & ICs (ISPSD '92), Waseda University, Tokyo (Japan), pp 248-249, May 1992.

  61. C. Mallikarjun and K.N. Bhat, "Effect of Back-gate bias and interface trapped charges on the subthreshold slope of thin-film SOI MOSFETs" Proceedings of International Conference on the Physics and Technology of Semiconductor Devices and IC's, IIT Madras, (India) pp 296-304, February 5-7, 1992.

  62. S. Karmalkar and K.N. Bhat, "Analytical Modelling of the Channel-Charge in ion-implanted MOSFETs and MESFETs" Proceedings of International Conference on the Physics and Technology of Semiconductor Devices & ICs, IIT Madras, (India), pp. 278-285, February 5-7, 1992.

  63. C.B. Goud and K.N. Bhat, "Modelling and Optimization of Semi-Insulator Passivated High Voltage Field-Plate Devices", 6th International workshop on Physics of Semiconductor Devices held at New Delhi (India), pp. 631-632, December 1991.

  64. C. Mallikarjun and K.N. Bhat, "A Rigorous Numerical Model for Drain Currents of SOI MOSFETs", NASECODE -VII, Copper Mountain, Colorado, (U.S.A)., pp. 222-223 in the proceedings edited by J.J.H. Miller, April 8-12, 1991.

  65. K.N. Bhat "Recent Advances in GaAs Surface Passivation", (Invited Talk) Proceedings of the V International workshop on the Physics of Semi-conductor Devices (New Delhi), pp. 483-492 December 1989.

  66. C.B. Goud and K.N. Bhat, "Effect of oxide thickness and junction curvature on the breakdown voltage of planar junctions equipped with field plate", Proceedings of the V Inter-national workshop on the Physics of Semiconductor Devices, New Delhi, (India) pp. 611-612 December 1989.

  67. M. Jagadeesh Kumar and K.N. Bhat, " A Novel Method of Extracting the Collector Recombination Level of High voltage Bipolar Transistors", Proceedings of the V International Workshop on the Physics of Semiconductors, New Delhi, (India), pp. 624-625 December 1989.

  68. K.N. Bhat "Electronic Materials", (Invited Talk) Silver Jubilee Symposium on Frontier Materials REC Trichy, (India) March 1989.

  69. K.N. Bhat, "Recent Advances in LPCVD for 3-D Integration", (Invited Talk) Indian Vacuum Soc. National Symposium on Vacuum Science and Technology (Abstract) IIT, Bombay, (India) December, 1988.

  70. M. Jagadeesh Kumar and K.N. Bhat, "Modelling of the Current Gain and Collector Life-time of High Voltage Bipolar Transistors having Heavily Doped Emitter" Indian Vacuum Society National Symposium on Vacuum Science and Technology New Delhi, (India) pp 145-156 December, 1988.

  71. K.N. Bhat, P.R.S. Rao and Nandita Basu, "MOS Studies on Gallium Arsenide using High Pressure Thermal Oxidation", International Conference and Intensive Tutorial Course on Semiconductor Materials- New Delhi, (India) December, 1988.

  72. M. Jagadeesh Kumar and K.N. Bhat, " On the Bandgap Narrowing Models in Bipolar Transistor Analysis", Proceedings (Contributed Papers) IV International workshop on the Physics of Semiconductor Devices, Madras, (India) pp. 145-147, December 1987.

  73. Nandita Basu and K.N. Bhat "Thermal Oxidation of GaAs" Proceedings (Contributed papers), IV International workshop on the Physics of Semiconductor Devices Madras, (India) 139-141 December 1987.

  74. S. Karmalkar and K.N. Bhat, "The Correct Equivalent Box Model for Implanted Channel MESFETs and BC MOSFETs", Proceedings (Contributed papers), IV International workshop on Physics of Semi-conductor Devices, Madras (India), pp 46-48 December 1987.

  75. Nandita Basu and K.N. Bhat, "A study of MIS Solar Cells using High Pressure Oxidation Technique as a New method of growing thin oxide", Proceedings of the Third International Conference on Physics of Semiconductor Devices, Madras, (India) December 1985.

  76. K.N. Bhat, "Polycrystalline Gallium Arsenide Solar Cells", (Invited Talk) Proceedings of the International Conference on the Physics and Technology of Compensated Semiconductors, Madras, (India) pp 79-83, February 20-22, 1985.

  77. M. Jagadeesh Kumar, C.R. Selva Kumar and K.N. Bhat, "The compensation effects and the dominant recombination level of platinum in silicon", International Conference on the Physics and Technology of Compensated Semiconductors, Madras (India), Abstracts pp 48-49, February 20-22, 1985.

  78. S. Karmalkar, K.N. Bhat and M.K. Achuthan, "Three terminal Measurements of N-Base Parameters in Thyristors", International Conference on the Physics and Technology of Compensated Semiconductors Madras (India), Abstracts pp 53, February 20-22, 1985.

  79. P.R.S. Rao, K.N. Bhat and K.R. Rao, "Simple method of achieving High sensitivity in MOS Capacitors", International Conference on Physics and Technology of Compensated Semiconductors, Madras, (India), Abstracts pp 61-62, February 20-22, 1985.

  80. P.R.S. Rao, K.N. Bhat and K.R. Rao, "High Sensitivity voltage variable Capacitor (HSVVC), "2nd International Workshop on the Physics of Semiconductor Devices, Delhi, Delhi (India), Abstracts pp 158-160, December 5-10, 1983.

  81. K.N. Bhat and M.K. Achuthan, "PIN Diode for phased Array Radar Applications- A study on the Effect of Diode Geometry" International Radar Symposium, Bangalore, (India) October 1983.

  82. K.N. Bhat, "Gallium Arsenide Solar Cells", (Invited Talk) Proceedings of the Conference on Compound Semiconductors and Related Compounds, Madras, (India) pp 42-57, September 1983.

  83. J.M.Borrego, R.P. Keeney, K.N. Bhat, L.G. Sundaram and S.K.Ghandhi, "Photo voltaic Characteristics of Diffused p+N Bulk GaAs Solar Cells", Sixteenth IEEE Photovoltaic Specialists Conference, Santiago, California (USA), September 1982.

  84. R.P.Keeny, S.K. Shastry, D.H. Reep, L.M.G. Sundaram, K.N. Bhat, S.K. Ghandhi and J.M. Borrego " Spectral Response of Thin film Poly-GaAs Solar Cells", 161st Meeting of the Electrochemical Society Montreal, (Canada), May 1982.

  85. O. Paz, K.N. Bhat, and J.M. Borrego, "Charge collection characterization of Polycrystalline n-GaAs Layers for Solar Cells", The Materials Research Society Proceedings, Boston (USA), pp 223-228, 1981.

  86. K.N. Bhat and M.K. Achuthan, "Some Aspects of the Effects of Transverse Diffusion Transverse stored charge, Base Geometry, and Base contact Location on the current-Gain and cut-off frequencies of Bipolar Transistors", Annual convention, IEEE (USA)-India section, Bangalore (India) February 1975.

  87. K.N. Bhat and D. Kakati, "Material Requirements of a High-power High frequency Device from Thermal considerations", Proceedings of the Symposium on Material Science Research, Madras (India), pp 37-58, December 1972.