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courses:ee6361_2019:start [2019/01/25 10:42] janakiraman [Class 1 (18 Jan 2018)] |
courses:ee6361_2019:start [2019/03/22 06:50] janakiraman |
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| * Flip flop | * Flip flop | ||
| * 6T SRAM basics | * 6T SRAM basics | ||
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| + | ===== Class 2 (25 Jan 2019) ===== | ||
| + | * 6T SRAM cell | ||
| + | * Static/ Read and Write noise margins | ||
| + | * Read/ Write/ Hold and Access failures | ||
| + | * Column interleaving | ||
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| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190125_IITM_C1.pdf|Lecture Slides]] | ||
| + | |||
| + | ===== Class 3 (1 Feb 2019) ===== | ||
| + | * Alternative Cell Types | ||
| + | - Split word line with single ended read | ||
| + | - Assymetric cells | ||
| + | - Decouple Read/Write Cells (8T Cells) | ||
| + | - Regenerative Feedback | ||
| + | * Impact of Variation | ||
| + | |||
| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190201_IITM_SRAM_C2.pdf|Lecture Slides]] | ||
| + | |||
| + | ===== Class 4 (8 Feb 2019) ===== | ||
| + | * Redundancy | ||
| + | * Modes of failure | ||
| + | * Assist Circuits | ||
| + | |||
| + | |||
| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190208_IITM_SRAM_C3.pdf|Lecture Slides]] | ||
| + | |||
| + | ===== Class 5 (15 Feb 2019) ===== | ||
| + | * BTI Stress | ||
| + | * Memory Testing | ||
| + | * Power | ||
| + | |||
| + | |||
| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190215_IITM_SRAM_C4.pdf|Lecture Slides]] | ||
| + | |||
| + | ===== Class 6 (22 Feb 2019) ===== | ||
| + | * Variation characterization | ||
| + | |||
| + | |||
| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190222_IITM_SRAM_C5.pdf|Lecture Slides]] | ||
| + | |||
| + | ===== Class 7 (1 Mar 2019) ===== | ||
| + | * Variation characterization (continued ...) | ||
| + | |||
| + | |||
| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190301_IITM_SRAM_C6.pdf|Lecture Slides]] | ||
| + | |||
| + | ===== Class 8 (8 Mar 2019) ===== | ||
| + | * Course project description - In Memory Computing | ||
| + | |||
| + | |||
| + | ===== Class 9 (15 Mar 2019) ===== | ||
| + | * Basics of DRAM | ||
| + | * Definition of Embedded | ||
| + | * Requirement for short BLs in DRAMs | ||
| + | * Transfer ratio | ||
| + | * Retention time/ Refresh rate analysis | ||
| + | * Power supplies required for eDRAM | ||
| + | * Advantages of eDRAM over eSRAM | ||
| + | |||
| + | [[https://goo.gl/forms/FG3QAKgnXLlHb4bB3|In class Quiz]] | ||
| + | |||
| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2018/material/EE6361-eDRAM-Janakiraman-2018.pdf|eDRAM Lecture Slides (2018)]] | ||
| + | |||
| + | ===== Class 10 (22 Mar 2018) ===== | ||
| + | * Write time calculation | ||
| + | * Hierarchical sensing | ||
| + | * 3T Micro Sense Amp | ||
| + | * Micro Sense Amp Evolution | ||
| + | |||
| + | Barth, J. et al., “A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier,” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 1, JANUARY 2008. [[http://ieeexplore.ieee.org/document/4443182/|PDF]] | ||
| + | |||
| + | [[https://forms.gle/7fZHaL8i231yZ9VW7|In class quiz]] | ||
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