Journal
Publications
Device Modeling and Simulation
 B. Prasannanjaneyulu,
D. S. Rawal and S. KARMALKAR,
Extraction of the edge/areal
components and path of the reverse gate leakage in a GaN HEMT from
measurements, Semiconductor Science and Technology, vol. 37, no. 4, p.
065014, Apr. 2022.
 K. Akshay and S. KARMALKAR,
Optimum Aspect Ratio of Superjunction
Pillars Considering Charge Imbalance,
IEEE Transactions on Electron Devices, vol. 68, no. 4, pp. 1798 
1803, Apr. 2021.
 Anvar A and S. KARMALKAR, Edge
effects on the contact resistance of sidebonded contacts to heavily
ndoped silicon nanowires, Physica E, vol.130, p. 114669, Jan.
2021.
 K. Akshay and S. KARMALKAR,
Improved Theoretical Minimum of the
Specific OnResistance of a Superjunction, Semiconductor Science and
Technology, vol. 36,
no. 1, p. 015021, Dec. 2020.
 K. Akshay and S.
KARMALKAR, Note Clarifying the Paper, “Charge Sheet
Super Junction in 4HSilicon Carbide: Practicability, Modeling and
Design”, IEEE
Journal of the Electron Devices Society, vol. 8, pp. 1315  1316, Oct. 2020.
 K. Akshay and S. KARMALKAR,
Charge Sheet Super Junction in
4HSilicon Carbide: Practicability, Modeling and Design, IEEE Journal of the Electron Devices Society, vol. 8, pp. 1129  1137,
Sep. 2020.
 K. Akshay and S. KARMALKAR,
Quick Design of a Superjunction
Considering Charge Imbalance Due to Process Variations, IEEE Transactions
on Electron Devices, vol.
67,
no.
8,
pp. 30243029,
Aug. 2020.
 B. Prasannanjaneyulu,
and S. KARMALKAR, Relative effectiveness of highk
passivation and gateconnected field plate techniques in enhancing GaN
HEMT breakdown, Microelectronics Reliability, vol. 110, no. 113698, pp. 1 – 6, Jul.
2020.
 D. Pradeep, S. Bhattacharya and S.
KARMALKAR, Augmentation and Assessment of a Universal FET I–V Model
for Simulating GaN HEMTs, IEEE
Transactions on Electron Devices, vol. 67, no. 3, pp. 847
– 854, Mar. 2020.
 B. Prasannanjaneyulu,
S. Mishra and S. KARMALKAR, Analysis of the Significant Rise in Breakdown
Voltage of GaN HEMTs From NearThreshold to Deep OffState Gate Bias
Conditions, IEEE Transactions on Device and Materials
Reliability, vol. 19,
no. 4, pp. 766 – 773, Dec. 2019.
 B. Prasannanjaneyulu,
S. Bhattacharya, and S. KARMALKAR, Mechanism and enhancement of the nearthreshold low
offstate breakdown voltage in gallium nitride high electron mobility
transistors, Jap. J. Appl. Phys., vol. 58, pp. SCCD011SCCD016, Apr.
2019.
 M. G. Jaikumar,
K. Akshay, and S. KARMALKAR, An algorithm to design floating field rings in SiC and
Si power diodes and MOSFETs,
SolidState Electron., vol. 156, pp. 7378, Mar.
2019.
 Anvar A. and S. KARMALKAR, Operating regimes and contact
resistance of sidebonded contacts to thin heavily doped semiconductor
nanowires, J. Appl. Phys.,
vol. 124, no. 18, pp. 184502.1184502.7, Nov. 2018.
 Anvar A. and S. KARMALKAR, Spacecharge and current nonuniformities,
and contact resistivity of endbonded metal contacts to thin heavily
doped semiconductor nanowires,
J. Appl. Phys., vol. 124, no. 8, pp. 084502.1084502.13, Aug.
2018.
 V. K. Gurugubelli
and S. KARMALKAR, An Integral Equation Approach to Model the Drastic
Change in Depletion Width From Bulk to Nanoscale
Junctions, IEEE Transactions on Electron Devices, vol. 65, no. 4, pp. 507 – 514, Apr. 2018.
 Anvar A. and S. KARMALKAR, Doping dependence of the contact
resistivity of endbonded metal contacts to thin heavily doped
semiconductor nanowires,
J. Appl. Phys., vol. 122, no. 21, pp. 214501.1214501.8, Dec.
2017.
 V. K. Gurugubelli
and S. KARMALKAR, Effective medium theory based analytical models for the
potential and field 2 distributions in arrays of nanoscale
junctions, J. Appl. Phys.,
vol. 122, no. 2, pp. 024502.1024502.11, Jul. 2017.
 D. Pradeep, D. S. Rawal, and S. KARMALKAR, Comparison of Two DC Extraction
Methods for Mobility and Parasitic Resistances in a HEMT, IEEE Transactions on Electron Devices,
vol. 64, no. 4, pp. 15281534, Apr. 2017.
 Shubham Jain, V. K. Gurugubelli
and S. KARMALKAR, An Analytical Model of the Frequency Dependent 3D
Current Spreading in Forward Biased Shallow Rectangular pn Junctions, IEEE Transactions on Electron Devices,
vol. 64, no. 2, pp. 507 – 514, Feb. 2017.
 D. Pradeep, Amit and S.
KARMALKAR, DC Extraction
of Gate Bias Dependent Parasitic Resistances and Channel Mobility in a
HEMT, IEEE Electron Device Lett., vol. 37, no. 11, pp. 14031406, Nov.
2016.
 V. K. Gurugubelli
and S. KARMALKAR, Effective medium theory of the spacecharge region
electrostatics of arrays of nanoscale
junctions, J. Appl. Phys.,
vol. 119, no. 2, pp. 024507.1024507.12, Jan. 2016.
 M. G. Jaikumar,
R. Ramakrishna Rao, and S. KARMALKAR, On the simulation and analytical modeling of onstate
DC characteristics of Silicon Carbide Doubleimplanted MOSFETs, SolidState Electron.,
vol. 114, pp. 4954, Dec. 2015.
 V. K. Gurugubelli
and S. KARMALKAR, Analytical Theory of the SpaceCharge Region of Lateral
pn Junctions in Nanofilms, J. Appl. Phys., vol. 118, no. 3, pp.
034503.1034503.10, Jul. 2015.
 V. K. Gurugubelli,
Rekha C. Thomas and S. KARMALKAR, An Analytical Model of the DC and
FrequencyDependent 2D and 3D Current Spreading in ForwardBiased
Shallow pn Junctions, IEEE
Trans. Electron Devices, vol. 62, no. 2, pp. 471477, Feb. 2015.
 V. K. Gurugubelli
and S. KARMALKAR, A Unified Analytical Model of the Junction
Electrostatics in Nanowire and Nanotube Arrays, Appl. Phys. Lett.,
vol. 104, p. 203502, May 2014.
 Arvind Ajoy, S. E. Laux, Kota V.R.M. Murali
and S. KARMALKAR, Multiscale model for phononassisted in bandtoband tunneling in
semiconductors, J. Appl. Phys.,
vol. 113, no. 6, pp. 064506.1064506.9, Feb. 2013.
 Saleem Haneefa and S.
KARMALKAR, A Closedform
Model for the Open Circuit Voltage of Solar Cells with Shunt
Resistance, Bias Dependent Photocurrent and Double Exponential Terms, IET Proc. – Circuits, Devices and Systems,
vol. 6, no. 4, pp. 211217, Jul. 2012.
 Komail Badami and S. KARMALKAR,
A
Quasistatic Compact Model for Coupling between Aligned Contacts on
Finite Substrates with Insulating / Conducting Backplanes, IEEE Trans. Computer Aided Design of
Integrated Circuits and Systems, vol. 31, no. 6, pp. 858867, Jun.
2012.
 Arvind Ajoy, Kota V.R.M. Murali and S. KARMALKAR, Brillouin Zone unfolding of Complex Bands in a
nearest neighbour tight binding scheme,
J. Phys.: Condens. Matter., vol. 24, no. 5, pp.
055504, Feb. 2012.
 K. R. K. Maheswaran and S. KARMALKAR, Effect of the ambient field on the
IV characteristics of nanowire resistors and junctions  A simulation
study, Physica
E, vol. 44, pp. 700707, Nov. 2011.
 A. K. Das and S. KARMALKAR,
Analytical
Derivation of the ClosedForm Power Law JV Model of an Illuminated Solar
Cell From the Physics Based Implicit Model, IEEE Trans. Electron Devices, vol. 58, no.
4, pp. 11761181, Apr. 2011.
 S. KARMALKAR and H. Saleem, The power law JV model of an illuminated solar cell, Sol. Energy Mater. Sol. Cells, vol. 95,
no. 4, pp. 10761084, Apr. 2011.
 S. KARMALKAR, K. R. K. Maheswaran and V. Gurugubelli,
Ambient field
effects on the currentvoltage characteristics of nanowire field
effect transistors, Appl.
Phys. Lett., vol. 98, no. 6, pp. 063508,
Feb. 2011.
 Arvind Ajoy and S. KARMALKAR, On a simple scheme for computing the
electronic energy levels of a finite system from those of the
corresponding infinite system,
J. Phys.: Condens. Matter., vol. 22, no. 43, pp.
435502, Oct. 2010.
 S. Sudharsanan
and S. KARMALKAR, Modeling of the reverse gate leakage in AlGaN/GaN high electron mobility transistors, J. Appl. Phys., vol. 107, pp. 064501, Mar.
2010.
 Saleem H. and S. KARMALKAR, An analytical method to extract the
physical parameters of a solar cell from four points on the
illuminated JV curve, IEEE
Electron Device Lett., vol. 30, No. 4,
pp. 349352, Apr. 2009.
 S. Srikanth
and S. KARMALKAR, On the Charge Sheet Superjunction (CSSJ) MOSFET, IEEE Trans. Electron Devices, vol. 55, No.
12, pp. 35623568, Dec. 2008.
 S. KARMALKAR and Saleem H., A physically based explicit IV model of a solar cell
for simple design calculations,
IEEE Electron Device Lett., vol. 29,
No. 5, pp. 449451, May 2008.
 D. Mahaveer
Sathaiya and S. KARMALKAR, A Closedform Model for
Thermionictrapassisted Tunneling,
IEEE Trans. Electron Devices, vol. 55, no.2 , pp.557564, Feb.
2008.
 S. Balaji
and S. KARMALKAR, Improving the Performance of Superjunction Devices
having Fixed Charge in Isolation and Termination Oxide Layers, IEEE Trans. Electron Devices, vol. 55, no.1,
pp. 446451, Jan. 2008.
 D. Mahaveer
Sathaiya and S. KARMALKAR, Edge Effects on Gate Tunneling
Current in HEMTs, IEEE Trans. Electron
Devices, vol. 54, no.10, Oct. 2007.
 S. KARMALKAR, Vishnu Mohan
P., Hari P. Nair and Y. Ramya,
Compact
Models of Spreading Resistances for Electrical / Thermal Design of
Devices and ICs, IEEE Trans. Electron
Devices, vol. 54, no. 7, pp. 14371743, Jul. 2007.
 D. Mahaveer
Sathaiya and S. KARMALKAR, A model for the high field leakage
current in nitrided oxides, J.
Appl. Phys., vol. 101, pp. 106104, May 2007.
 S. Balaji
and S. KARMALKAR, Effects of Oxide Fixed Charge on the Breakdown Voltage
of Superjunction Devices,
IEEE Electron
Device Lett., vol. 28, No.
3, pp. 229231, Mar. 2007.
 S. KARMALAKAR and N. Soudabi, A Closed  form Model of the Channel Electric Field Under the Field Plate in a HEMT, IEEE Trans. Electron Devices, vol. 53, no.
10, pp. 24302437, Oct. 2006.
 D. Mahaveer
Sathaiya and S. KARMALKAR, Thermionic Trap  Assisted Tunneling
model and its application to leakage current in nitrided
oxides and AlGaN / GaN HEMTs , J. Appl. Phys., vol. 99, 093701, May 2006.
 S. KARMALKAR, Naresh Satyan and D. Mahaveer Sathaiya, On Resolution of the Mechanism for
Reverse Gate Leakage in AlGaN / GaN HEMTs , IEEE Electron Device Lett.,
vol. 28, pp. 8789, Feb. 2006.
 S. KARMALKAR, Vishnu Mohan
P. and Presenna Kumar, A Unified Compact Model of Electrical
and Thermal 3D Spreading Resistance Between Eccentric Rectangular and
Circular Contacts , IEEE
Electron Device Lett., vol. 26, no. 12,
pp. 909912, Dec. 2005.
 S. KARMALAKAR, Michael S. Shur, Grigory Simin and M. Asif Khan, FieldPlate Engineering for Heterostructure Field Effect Transistors , IEEE Trans. Electron Devices,vol. 52, no. 12, pp.
25342540, Dec. 2005.
 S. KARMALKAR, D. Mahaveer Sathaiya and
Michael Shur, Mechanism of the Reverse Gate Leakage in AlGaN / GaN HEMTs,
Appl. Phys. Lett., vol. 82, pp. 3976,
Jun. 2003.
 S. KARMALKAR, On the Bipolar Transistor Collector
Current at the Onset of Base  widening as a Function of the Collector
 base Voltage , Solid State Electron, vol. 47, pp.951955,
Jun. 2003.
 S. KARMALKAR and D. Mahaveer Sathaiya, Unified Closedform Model of
Thermionicfield and Field Emissions through a Triangular Potential
Barrier, Appl. Phys. Lett., vol. 82, pp. 1431, Mar. 2003.
 S. KARMALKAR and A. Sharat Chandra, High Frequency BJT: Modeling, and Parameter Extraction
from Simple Measurements on Finished Devices , Solid State Electron., vol. 47,pp.131141,
Jan. 2003.
 S. KARMALKAR and Umesh Mishra, Very high voltage AlGaN / GaN
HEMTs using a fieldplate deposited on a stepped insulator
, SolidState Electron., vol. 45,
pp.16451652, Sep. 2001.
 S. KARMALKAR, J. Deng, M.
S. Shur and R. Gaska,
RESURF AlGaN / GaN HEMT for very high voltage power
switching , IEEE Electron Device Lett., vol. 22, pp. 373375, Aug. 2001.
 S. KARMALKAR and Umesh Mishra, Enhancement of Breakdown Voltage in AlGaN
/ GaN High Electron Mobility Transistors Using A Field Plate , IEEE Trans. Electron Devices, vol. 48,
pp.15151521, Aug. 2001.
 S. KARMALKAR and R.
Ramakrishna Rao, A simple yet comprehensive unified physical model of
the donor layer electrons in deltadoped and uniformly doped high
electron mobility transistors ,
IEEE Trans. Electron Devices, vol. 47, pp. 667676, Apr. 2000.
 S. KARMALKAR and Girish R., A simple yet comprehensive unified physical model of
the 2dimensional electron gas in deltadoped and uniformly doped high
electron mobility transistors ,
IEEE Trans. Electron Devices, vol. 47, pp. 1123, Jan. 2000.
 S. Ramakrishna and S.
KARMALKAR, HEMT modeling
using semiphysical expressions for the equilibrium spacecharge
parameters of the modulation doped heterojunction ,
IEE Proceedings on Circuits Devices and Systems, vol. 146, pp.
211214, Aug. 1999.
 S. KARMALKAR, A unified equilibrium treatment of
modulation doped heterojunctions and grossly asymmetric homojunctions, and its application to MODFET design , IEEE Trans. Electron Devices, vol. 45, pp.
21872195, Oct. 1998.
 S. KARMALKAR, A new equivalent MOSFET
representation of a HEMT to analytically model nonlinear charge
control for simulation of HEMT devices and circuits , IEEE Trans. Electron Devices, vol. 44, pp.
862868, May 1997.
 S. KARMALKAR and K. N. Bhat, The shifted rectangle approximation for simplifying the
analysis of ionimplanted MOSFETs and MESFETs , SolidState Electron., vol. 34, pp.
681692, Jul. 1991
 S. KARMALKAR and K. N. Bhat, A three terminal remote base biasing scheme of the thyristor for three terminal measurement of base parameters , SolidState Electron. , vol. 34, pp.
613616, Jul. 1991.
 S. KARMALKAR and K. N. Bhat, A process parameter based circuit simulation model for
ionimplanted MOSFETs and MESFETs ,
IEEE J. of SolidState Circuits,
vol. 24, pp.139145, Feb. 1989.
 S. KARMALKAR and K. N. Bhat, A simple CV method to extract the correct equivalent
box and Gaussian representations of the doping profile and flat band
voltage in BC MOSFETs ,
SolidState Electron., vol. 31, pp.15671571, Nov. 1988.
 S. KARMALKAR and K. N. Bhat,
The correct
equivalent box representation for the buried layer of BC MOSFETs in
terms of implantation parameters ,
IEEE Electron Device Lett., vol. 8,
pp. 457  459, Oct. 1987.
Device / MEMS Fabrication
 P. V. M. Ramanamurthy, R. Ahrens, S. KARMALKAR, Piezoelectric Microvalve
, Indian J. of Pure and
Appl. Phys., vol. 45, no. 4, pp. 278281, April 2007.
 S. KARMALKAR and Pradeep
Kumar, Effects of
Nickel and Palladium Activations on the Adhesion and IV
Characteristics of asplated Electroless
Nickel Deposits on Polished Crystalline Silicon ,
J. Electrochem. Soc. , vol. 151, pp. 554558,
September 2004.
 V. Pradeep Kumar and S.
KARMALKAR, Study of electroless nickel on polished silicon for MEMS
applications , Int. J. of Comp. Eng.
Sci., vol. 4, no. 3, pp. 505508, September 2003.
 S. KARMALKAR, J. Bannerjee and K. R. K. Rao, An improved procedure for bump
plating of planar diodes , J. Mater. Process. Technol., vol. 134, no.
2, pp. 210213, March 2003.
 S. KARMALKAR, Roji Marjori and V. G. Sumithra, Adhesion of Electroless Nickel
Plating on Polished silicon , J. Adhesion Sci. Technol. vol. 16 , no. 11,
pp. 15011507, 2002.
 S. KARMALKAR, N. Venkatsubramaniam, and Stimit
Oak, DC and
periodic reverse electroplating of Semiconductor Surfaces Having
Adjacent Ptype and Ntype Areas ,
J. Electrochem. Soc., vol. 149, pp.
C429C431, August 2002.
 S. KARMALKAR and J.
Banerjee, A study of
immersion processes of activating polished crystalline silicon for
autocatalytic electroless deposition of
palladium and other metals , J. Electrochem. Soc.,
vol. 146, pp. 580584, February 1999.
 S. KARMALKAR, D. Sridhar
and J. Banerjee, A novel activation process for autocatalytic electroless deposition on silicon substrates , J. Electrochem. Soc.,
vol. 144, pp. 16961698, May 1997.
 Balaji Suresh, Satish Kumar, S.
KARMALKAR and Enakshi Bhattacharya, Electroless nickel plated contacts to
hydrogenated amorphous silicon ,
Thin Solid Films, vol. 252, pp. 7881, 1994.
Education
 S. KARMALAKAR, Introducing the Device Modeling
Procedure to Electrical Engineering Students , IEEE Trans. Education, vol. 50, no. 2,
pp.137142, May 2007.
 S. KARMALKAR, Simple unified elucidations of some
semiconductor device phenomena ,
IEEE Trans. Education, vol. 42, pp. 323327, November 1999.
 S. KARMALKAR, Appealing analogies for aiding
student's assimilation of some key physical concepts related to
semiconductor devices , IEEE Trans. Education, vol. 42, pp.
328330, November 1999.
Top
Patents
 S. KARMALKAR and D.
Sridhar, An apparatus
for maintaining steady plating current in pulse electroplating applications , Indian Patent #188558 (sealed on 18th July 2003).
 S. KARMALKAR and D.
Sridhar, A process for
obtaining a silicon substrate with uniform and adherent deposit of
palladium or other metal thereon by electroless
plating , Indian Patent #188631
(sealed on 1st Aug 2003).
 S. KARMALKAR and D.
Sridhar, A method of
electroplating metal contacts on a P+N semiconductor diode substrate
and an apparatus for carrying out the said method ,
Indian Patent # 188350 (sealed on 1st Aug 2003).
Top
Book Chapters
 S. KARMALKAR, M. S. Shur and R. Gaska, GaNbased Power High Electron
Mobility Transistors ,
Chapter 3 in Wide Energy Bandgap Electronic Devices (pp.
175218), edited by Fan Ren, World
Scientific (2003).
 S. KARMALKAR, A Course for Fostering Research
Spirit, in Collection of
papers by distinguished academics and professionals, brought out
by Indian Society for Technical Education, (2011).
Top
Video Lectures
1. Solid State Devices, hosted on NPTEL and YouTube.
2. Semiconductor Device Modeling, hosted on NPTEL and YouTube.
3. Introduction to Research, hosted on YouTube.
4.
Follow no one, but learn from everyone, and acknowledge it
too, hosted on YouTube.
Top

Journal Publications
Device Modeling and Simulation
Device / MEMS fabrication
Education
Patents
Book Chapters
Video Lectures
