Electrical Engineering

Anjan Chakravorty

Ph.D. from Indian Institute of Technology Kharagpur in 2005.

M. Tech in 2001 from the Institute of Radiophysics and Electronics, University of Calcutta

B. Tech. in 1999 from Kalyani Govt. Engineering College, University of Kalyani.

044-2257 4460

anjan@ee.iitm.ac.in

Personal Link

I joined the Electrical Engineering Department of IIT Madras as Assistant professor in January 2007. In August 2012, I became Associate Professor. From March 2018 I am working in this department as Professor. I received my Ph.D. from Indian Institute of Technology Kharagpur in 2005. I did my M. Tech. in 2001 from the Institute of Radiophysics and Electronics, University of Calcutta, and B. Tech. in 1999 from Kalyani Govt. Engineering College, University of Kalyani. During 2005-2006, I was a Post Doctorate Fellow at Dresden University of Technology, Germany where I worked on Compact Modeling of SiGe Heterojunction Bipolar Transistors

Modeling of Thermal Effects in Semiconductor Devices and Thermally Aware Device Design.
Design and Compact Modeling of Si-Ge Heterojunction Bipolar Transistors.
Design and Compact Modeling of Laterally Double-diffused MOS Transistors.
Design and Compact Modeling of On-Chip Spiral Inductors.
Computational Modeling of Nano-Transistors such as Silicon Nanowire FETs or Carbon Nanotube FETs.
I am involved in compact modeling.
Modeling of Thermal Effects in Semiconductor Devices and Thermally Aware Device Design.
Bipolar Transistors: High-Speed SiGe-HBTs, Power HBTs in both Bulk and SOI processes.
Laterally Double Diffused MOS Transistors: in Bulk and SOI processes.
On-Chip Spiral Inductors.
I am also interested in analytical modeling, computational modeling and design of various novel devices, such as Double Gate MOSFETs ,Silicon Nanowire FETs Carbon Nanotube FETs.

Current Courses

Out of the six courses mentioned above, presently I am involved in teaching the following courses:Solid State Devices (EE3001).
Semiconductor Device Modeling (EC5132).
Compact Modeling of Devices for High Speed IC Design (EE6150).
Electronic and Photonic Nano-Scale Devices (EE4001).

Previous Courses

Since 2007, I taught the following courses in the Electrical Engineering Department:
Digital Circuits and Systems (EC2101).
Solid State Devices (EC3101).
Device Modeling (EE3620).
Semiconductor Device Modeling (EC5132).
Compact modeling of Devices for High Speed IC Design (EE6150).
Electronic and Photonic Nano-Scale Devices (EE4001).

Journals

Prashanth Kumar Manda, Logesh Karunakaran, Sandeep Thirumala, Anjan Chakravorty,and Soumya Dutta, Modeling of Organic Metal-Insulator-Semiconductor Capacitor, IEEE Transactions on Electron Devices, Accepted.
J Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, A Scalable, Broadband and Physics Based Model for On-Chip Rectangular Spiral Inductors, IEEE Transaction on Magnetics, Accepted.
J Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, A Substrate Model for On-Chip Tapered Spiral Inductors With Forward and Reverse Excitations, IEEE Transactions on Electron Devices, Vol 66, No 1, pp 802-805, 2019.
J Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, Compact Modeling of Proximity Effect in High- Q Tapered Spiral Inductors, IEEE Electron Device Letters, pp 588-590, 2018.
Nikhil K, Nandita DasGupta, Amitava DasGupta, Anjan Chakravorty, SOI-LDMOS Transistors With Optimized Partial n+ Buried Layer for Improved Performance in Power Amplifier Applications, IEEE Transactions on Electron Devices, Vol 63, No 10, pp 4931-4937, 2018.

Conference Proceedings

B Saha, S Fregonese, S R Panda, A Chakravorty, D Celi, T Zimmer, Collector-substrate modeling of SiGe HBTs up to THz range, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019,Accepted.
S R Panda, S Fregonese, A Chakravorty, D Celi, T Zimmer, TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Accepted.
Suresh Balanethiram, Shubham Pande, Amit Kumar Singh, Umapathi B, Jatana H S, Nihar Mohapatra and Anjan Chakravorty, Development of Low-Cost Silicon BiCMOS Technology for RF Applications, IEEE MOS-AK India, 2019.
J Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, Compact Modeling of Series Stacked Tapered Spiral Inductors, Accepted in IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), January,2019.

Patents

P Sarvepalli and A Chakravorty, Monitoring Fuel Consumption and Predicting Residual Fuel in a Cylinder, Filed at India Patent office, No/1774/CHE/2013, 2013.
Anjan Chakravorty and Pradeep Sarvepally, No-1337/CHE/2014, Fuel leakage detection system, filed.

Books Authored

Michael Schroeter and Anjan Chakravorty, "Compact Hierarchical Bipolar Transistor Modeling with HICUM," World Scientific, Singapore, International Series on Advances in Solid State Electronics and Technology (ASSET), October, 2010.

After joining IIT Madras, I have completed the following two projects as principal investigator (PI).
Investigation and Compact Modeling of Noise in SiGe Hetero-junction Bipolar Transistors, DST 2008-2011 (INR 17_5 lakhs).
Compact Modeling of Semiconductor Devices, IIT Madras, 2007-2010 (INR 5 lakhs).
Presently I am involved in the following sponsored project as PI.
I am also involved in other projects as Co-PI.
Development of Automated SPICE parameter Extraction Tool for SiGe HBTs Using Scalable Approach, DST 2012-2015 (INR 32_82 lakhs).