Integrated Photonics with SiN Waveguides

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Name of the Speaker: Anushka Tiwari (EE19D032)
Name of the Guide: Prof. Bijoy Krishna Das & Prof. Enakshi Bhattacharya
Venue: ESB 244 (Seminar Hall)
Date/Time: August 8th 2022 at 2:30 PM.

Integrated photonics has gained a lot of interest in high-speed optical interconnects, high-capacity information processing systems and many other allied fields due to the evolution of cost-effective CMOS compatible silicon photonics technology. Transparency and low-loss optical waveguide design are the key for large scale functional photonic integrated circuit implementation. In general, silicon waveguide core is used for the realization of various passive and active components in the silicon-on-insulator (SOI) platform. However, a typical silicon waveguide possesses certain limitations owing to its lower band-gap and higher losses at communication wavelengths above the absorption band edge. Waveguide with silicon nitride (SiN) core in contrast offers wider transparency and relatively lower losses; thus, becoming more and more popular for designing large scale microwave/millimetre-wave and quantum photonic integrated circuit applications. Though SiN is CMOS compatible foundry material, there are few challenges to grow optical grade SiN film for the realization of low loss waveguides.

In this research proposal talk, first I am going to discuss the present state-of-the-art for low loss silicon nitride photonics integrated circuits fabrication adopted by major research institutes and commercial foundries. And thereafter, current progress of SiN waveguide technology development at IIT Madras and design of basic building blocks for novel photonic integrated circuit application will be discussed.