Publications in International Conferences


2019
  • B.Saha, S. Fregonese, S.R. Panda, A Chakravorty, D. Celi, T. Zimmer, “Collector-substrate modeling of SiGe HBTs up to THz range”, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019,Accepted.
  • S.R. Panda, S. Fregonese, A Chakravorty, D. Celi, T. Zimmer, “TCAD simulation and assessment of anomalous deflection in measured S-parameters of SiGe HBTs in THz range”, IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), 2019, Accepted.
  • Suresh Balanethiram, Shubham Pande, Amit Kumar Singh, Umapathi B, Jatana H S, Nihar Mohapatra and Anjan Chakravorty, “Development of Low-Cost Silicon BiCMOS Technology for RF Applications”, IEEE MOS-AK India, 2019.
  • J. Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, “Compact Modeling of Series Stacked Tapered Spiral Inductors”, Accepted in IEEE 19th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), January,2019

2018
  • Ch. L N Pavan, Vivek Oja, Rama Divakaruni, Amitava DasGupta, Anjan Chakravorty and Deleep Nair “Extraction of RTN Time Constants and Amplitude in SiGe Channel pFETs”,IEEE International Conference on Emerging Electronics”, India, December, 2018.

2016
  • Shubham Gupta, KrishnanNadar Savithry Nikhil, Anjan Chakravorty, Amitava DasGupta, and Nandita DasGupta, “Prediction of IMD behaviour in LDMOS transistor amplifiers using a physics-based large signal compact model”, accepted in IEEE International Conference on Emerging Electronics, 2016.
  • J Sathyasree, Venkata Narayana Vanukuru, Deleep Nair, and Anjan Chakravorty, “Modeling of Rectangular On-Chip Spiral Inductors”, Proc. IEEE Asia Pacific Microwave Conference, accepted.
  • Suresh Balanethiram, Anjan Chakravorty, Rosario D’Esposito, Sebastien Fregonese, Thomas Zimmer, “Extracting the FEOL and BEOL Components of Thermal Resistance in SiGe HBTs”, accepted in IEEE International Conference on Emerging Electronics, 2016.
  • Shon Yadav, Anjan Chakravorty, “Hybrid Two-Section Model for the Small-Signal Current Crowding Effect in SiGe HBTs”, accepted in IEEE International Conference on Emerging Electronics, 2016
  • Chhandak Mukherjee, Thomas Jacquet, Anjan Chakravorty, Thomas Zimmer, Josef Boeck, Klaus Aufinger and Cristell Maneux, “Comprehensive Study of Random Telegraph Noise in Base and Collector of advanced SiGe HBT: Bias, Geometry and Trap Locations”, ESSDERC 2016.
  • Suresh Balanethiram, Anjan Chakravorty, Rosario D’Esposito, Sebastien Fregonese, Anjan Chakravorty, “An Improved Scalable Self-Consistent Iterative Model for Thermal Resistance in SiGe HBTs”, BCTM 2016.
  • Shon Yadav Balkrishnan, Anjan Chakravorty, Michael Schroter, “Hybrid Small-Signal π-Model for the Lateral NQS Effect in SiGe HBTs”, BCTM 2016.
  • Rosario D'Esposito, Sebastien Fregonese, Thomas Zimmer, Anjan Chakravorty, “Dedicated test-structures for investigation of the thermal impact of the BEOL in advanced SiGe HBTs in time and frequency domain”, 2016 International Conference on Microelectronic Test Structures (ICMTS), pp. 28 -31, 2016.

2015
  • Suresh Balanethiram, Anjan Chakravorty, Rosario D'Esposito, Sebastien Fregonese, Thomas Zimmer, “Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs” Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM, pp. 68-71, 2015.
  • Suresh Balanethiram, Anjan Chakravorty, “Analysis of electro-thermal instability in bipolar transistors”, Proc. IEEE Int. Conf. On Electron Devices and Solid-State Circuits (EDSSC), pp. 713-716, 2015.
  • Sujith Thomas, Nitin Prasad, Amitava DasGupta, Anjan Chakravorty, Nandita DasGupta, “Parameter extraction methodology for SOI-LDMOS transistors”, IEEE Int. Conf. on Electron Devices and Solid-State Circuits (EDSSC), pp. 503-506, 2015.

2014
  • Venkata Narayana Rao Vanukuru, Vamsi Krishna Velidi, Anjan Chakravorty, “60 GHz millimeter-wave compact TFMS bandstop filter using transversal resonator in 0.18μm CMOS technology”, 2014 IEEE International Microwave and RF Conference (IMaRC), pp. 248 - 250, 2014.
  • Shon Yadav, Anjan Chakravorty; Michael Schröter, “Small-signal modeling of the lateral NQS effect in SiGe HBTs”, 2014 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp. 203 - 206, 2014.
  • Venkata Narayana Rao Vanukuru, Anjan Chakravorty, “High efficiency millimeter-wave stacked two turn transformer using only top two thick metals”, 2014 IEEE International Microwave and RF Conference (IMaRC), pp. 251-254, 2014.
  • Venkata Narayana Rao Vanukuru, Nagasatish Godavarthi, Anjan Chakravorty, “Miniaturized millimeter-wave narrow bandpass filter in 0.18 μm CMOS technology using spiral inductors and interdigital capacitors”, 2014 International Conference on Signal Processing and Communications (SPCOM), pp. 1-4, 2014.
  • Venkata Narayana Rao Vanukuru, Anjan Chakravorty, “Integrated layout optimized high-g inductors on high-resistivity SOI substrates for RF front-end modules”, 2014 International Conference on Signal Processing and Communications (SPCOM), pp. 1-5, 2014.
  • R R Manikandan, Venkata Narayana Rao Vanukuru, Anjan Chakravorty, Bharadwaj Amrutur, “A parameterized cell design for high-Q, variable width and spacing spiral inductors”, 2014 IEEE International Microwave and RF Conference (IMaRC), pp. 312-315, 2014.
  • R. R. Manikandan, Venkata Narayana Rao Vanukuru, Anjan Chakravorty, Bharadwaj Amrutur, “Design and modeling of high-Q variable width and spacing, planar and 3-D stacked spiral inductors”, 18th International Symposium VLSI Design and Test, pp. 1-6, 2014.

2012
  • N. Augustine and A. Chakravorty, “Modeling Minority Charge Partitioning Factor in SiGe HBTs Using Full Regional Approach”, Proc. (abstract) of 5th International Conf. on Computers and Devices for Communication, EDM-15, 2012.
  • N. Augustine, K. Kumar, A. Bhattacharyya, T. Zimmer, and A. Chakravorty, “Efficient Models for Non-Quasi-Static Effects and Correlated Noise in SiGe HBTs”, Proc. IEEE International Conf. on Electron Devices and Solid-State Circuits, pp. 1-4, 2012.
  • K. Kumar, A. Chakravorty, "Modeling collector current noise PSD of SiGe HBTs including self-heating and non-quasi-static effects", Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 1-4, 2012.

2011
  • N. Augustine, K. Kumar, A. Chakravorty, “Applicability of Partition Charge Based Approach for Modeling Non-Quasi-Static Effects in SiGe HBTs”, Proc. (abstract) of 16th International Workshop on the Physics of Semiconductor Devices, MS P.07, pp. 117, 2011.
  • K. Kumar and A. Chakravorty, “Modeling High-Frequency Noise in SiGe HBTs Using Delayed Minority Charge”, Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, BCTM-10.4, pp. 183-186, 2011.

2009
  • Lekshmi T, A. Mittal, A. Dasgupta, A. Chakravorty and N. Dasgupta, “Compact Modeling of SOI-DMOS Including Quasi-Saturation Effect ”, Proc. Second Int. Workshop on Electron Devices and Semiconductor Technology (IEDST), pp. 1-4, DOI 10.1109/EDST.2009.5166121, 2009.
  • J. Jacob, A. Dasgupta and A. Chakravorty, “Physics Based Modeling of Non-Quasi-static Effects in SiGe HBTs ”, Proc. Second Int. Workshop on Electron Devices and Semiconductor Technology (IEDST), pp. 1-4, DOI 10.1109/EDST.2009.5166125, 2009.
  • K. Kumar and A. Chakravorty, “Physics Based Modeling of RF Noise in SiGe HBTs ”, Proc. Second Int. Workshop on Electron Devices and Semiconductor Technology (IEDST), pp. 1-4, DOI 10.1109/EDST.2009.5166130, 2009.
  • A. Chakravorty, “Bipolar Transistor Equivalent Circuit Models”, Proc. (abstract) of 15th International Workshop on the Physics of Semiconductor Devices, pp. 62, 2009.
  • J. Jacob, A. DasGupta, N. DasGupta, A. Chakravorty, “Analysis of LCR network for modeling non-quasi-static effects in SiGe HBTs”, Proc. (abstract) of 15th International Workshop on the Physics of Semiconductor Devices, pp. 173, 2009.
  • K. Siddharth, N. V. Sudheer, and A. Chakravorty, “Physics Based Modeling of Carbon Nanotube FET”, Proc. (abstract) of 15th International Workshop on the Physics of Semiconductor Devices, pp. 167, 2009.
  • P. K. Holla, D. Enbasekar, S. Kailash, Swagata K., A. Chakravorty, “HIPAX: Simple, Accurate and Automated Parameter Extraction for HICUM/L2”, Proc. (abstract) of 15th International Workshop on the Physics of Semiconductor Devices, pp. 168, 2009.
  • J. Jacob, A. DasGupta, A. Chakravorty, “Transient Charge-Based Model for SiGe HBTs”, Int. Conf. on Emerging Trends in Electronic and Photonic Devices and Systems, pp. 62-65, 2009.

2007
  • S.S. Mahato, D. Mitra, T.K. Maiti, P. Chakraborty, B. Senapati, A. Chakravorty, S.K. Sarkar, and C. K. Maiti, “Low Temperature Behaviour of Strained-Si n-MOSFETs”, Proc. of 14th International Workshop on the Physics of Semiconductor Devices, pp. 115-118, 2007.

2006
  • P. Sakalas, A. Chakravorty, M. Schröter, M. Ramonas, J. Herricht, A. Shimukovitch, C. Jungemann, “Modeling of High Frequency Noise in SiGe HBTs ”, Proc. IEEE Int. Conf. Simulation of Semiconductor Processes and Devices, (SISPAD), pp. 271-274, 2006.
  • P. Sakalas, J. Herricht, A. Chakravorty, M. Schröter, “Compact Modeling of High Frequency Correlated Noise in HBTs ”, Proc. IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp. 279-282, 2006.
  • J. Herricht, P. Sakalas, A. Chakravorty, M. Schröter, "Transistor Kompaktmodell mit korrelierten Rauschquellenfür sehr hohe Frequenzen ", 9. ITG/GMM Fachtagung, Analog, 2006.

2004
  • B. Senapati, R. F. Scholz, D. Knoll, B. Heinemann and A. Chakravorty, “Application of the VBIC Model for SiGe:C Heterojunction Bipolar Transistors ”, Proc. of International Conference on Mixed Design of Integrated Circuits and Systems, Poland, pp.94-96, 2004.
  • A. Chakravorty, B. senapati, G. Dalapati, R. Garg, C. K. Maiti, G. A. Armstrong, H. S. Gamble, P. Ashburn and H.A.W. El Mubarek, “HICUM Modeling of SiGe HBTs Fabricated in Wafer Bonded SOI Substrates ”, Int. Conf. on Computers and Devices for Communications, EDM-0410-CP, pp. 1-4, 2004.

2003
  • A. Chakravorty, B. senapati, G. Dalapati, R. Garg, C. K. Maiti, G. A. Armstrong, H. S. Gamble, P. Ashburn and H.A.W. El Mubarek, “VBIC Modeling of SiGe HBTs Fabricated in Wafer Bonded SOI Substrates ” Proc. of 12th International Workshop on the Physics of Semiconductor Devices, pp 591-593, 2003.
  • A. Chakravorty, R. Garg, C. K. Maiti, “VBIC HICUM Models Applied to Advanced BJTs Developed in High Performance Mixed Analog/Digital 0.5μm BiCMOS BC050 Process ”, Int. Conf. HOT Digest, India, pp 12, 2003.
  • A. Chakravorty, R. Garg, C. K. Maiti, “VBIC Modeling of High Speed Bipolar Transistors Fabricated in a High Performance Mixed Analog/Digital 0.5μm BiCMOS Technology ” Proc. NCIIT, India, pp 94-96, 2003.

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