MOSIS WAFER ACCEPTANCE TESTS RUN: T7CZ (MM_NON-EPI_THK-MTL) VENDOR: TSMC TECHNOLOGY: SCN025 FEATURE SIZE: 0.25 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: TSMC 0251P5M TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.36/0.24 Vth 0.49 -0.48 volts SHORT 20.0/0.24 Idss 599 -260 uA/um Vth 0.50 -0.53 volts Vpt 7.6 -7.2 volts WIDE 20.0/0.24 Ids0 6.9 < 2.5 pA/um LARGE 50/50 Vth 0.43 -0.58 volts Vjbkd 5.2 -6.7 volts Ijlk <50.0 <50.0 pA Gamma 0.43 0.62 V^0.5 K' (Uo*Cox/2) 119.0 -25.8 uA/V^2 Low-field Mobility 392.87 85.18 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN5M_DEEP (lambda=0.12) 0.00 -0.04 thick oxide, NMOS -0.01 -0.04 thick oxide, PMOS -0.06 SCN6M_SUBM (lambda=0.15) -0.06 0.00 thick oxide, NMOS -0.10 0.00 thick oxide, PMOS -0.15 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ PLY+BLK N+BLK POLY M1 M2 UNITS Sheet Resistance 3.5 2.9 176.0 58.0 3.1 0.08 0.07 ohms/sq Contact Resistance 5.8 5.1 4.7 2.51 ohms Gate Oxide Thickness 57 angstrom PROCESS PARAMETERS M3 M4 M5 N_W UNITS Sheet Resistance 0.08 0.08 0.02 1059 ohms/sq Contact Resistance 4.85 7.58 10.06 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M4P M1 M2 N_W D_N_W UNITS Area (substrate) 1727 1894 103 33 13 124 aF/um^2 Area (N+active) 6062 aF/um^2 Area (P+active) 5795 aF/um^2 Area (poly) 66 aF/um^2 Area (metal1) 38 aF/um^2 Area (metal4) 949 aF/um^2 Area (r well) 1748 aF/um^2 Area (no well) 1080 aF/um^2 Fringe (substrate) 501 359 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.99 volts Vinv 1.5 1.08 volts Vol (100 uA) 2.0 0.12 volts Voh (100 uA) 2.0 2.24 volts Vinv 2.0 1.14 volts Gain 2.0 -17.82 Ring Oscillator Freq. DIV1024 (31-stg,2.5V) 258.30 MHz D1024_THK (31-stg,3.3V) 191.70 MHz Ring Oscillator Power DIV1024 (31-stg,2.5V) 0.06 uW/MHz/gate D1024_THK (31-stg,3.3V) 0.10 uW/MHz/gate