MOSIS WAFER ACCEPTANCE TESTS
                                          
     RUN: T68Y (7RF_6LM_ML)                            VENDOR: IBM-BURLINGTON
   TECHNOLOGY: SCN018                                FEATURE SIZE: 0.18 microns
                                   Run type: SKD


INTRODUCTION: This report contains the lot average results obtained by MOSIS
              from measurements of MOSIS test structures on each wafer of
              this fabrication lot. SPICE parameters obtained from similar
              measurements on a selected wafer are also attached.

COMMENTS: 7RF_IBM-BURLIN


TRANSISTOR PARAMETERS     W/L       N-CHANNEL P-CHANNEL  UNITS
                                                        
 MINIMUM                  0.24/0.18                     
  Vth                                    0.46     -0.43  volts
                                                        
 SHORT                    20.0/0.18                     
  Idss                                 569      -282     uA/um
  Vth                                    0.47     -0.44  volts
  Vpt                                    4.5      -4.1   volts
                                                        
 WIDE                     20.0/0.18                     
  Ids0                                 120.6    -167.8   pA/um
                                                        
 LARGE                    20.0/20.0                     
  Vth                                    0.36     -0.42  volts
  Vjbkd                                  3.8      -4.2   volts
  Ijlk                                 <50.0     <50.0   pA
                                                        
 K' (Uo*Cox/2)                         153.3     -32.1   uA/V^2
 Low-field Mobility                    390.68     81.81  cm^2/V*s
                                                        


PROCESS PARAMETERS     N+    P+      POLY    P+PLY    M1     M2   UNITS
 Sheet Resistance       6.3   6.1    6.3    252.9    0.08   0.09  ohms/sq
 Contact Resistance     7.5   7.4    6.9                    2.31  ohms
 Gate Oxide Thickness  44                                         angstrom
                                                                      
PROCESS PARAMETERS   M3   M4   M5   N+BLK P+BLK  M6   RP   POLY_NON  TaN  UNITS
 Sheet Resistance   0.09 0.10 0.10   67.2 105.2 0.01 163.7  1750.7   61.1 ohms/sq
 Contact Resistance 4.41 6.53 8.69              8.70                      ohms
                                                                            
COMMENTS: BLK is silicide block.


CAPACITANCE PARAMETERS    N+     P+    POLY    D_N_W    R_W     N_W     UNITS
 Area (substrate)        809   1156              373             189    aF/um^2
 Area (N+active)                      7809                              aF/um^2
 Area (P+active)                      7426                              aF/um^2
 Area (r well)           902                                            aF/um^2
 Area (d well)                                          1326            aF/um^2
 Fringe (substrate)      187    111                                     aF/um
 Overlap (N+active)                    442                              aF/um
 Overlap (P+active)                    525                              aF/um
                                                                       


CIRCUIT PARAMETERS                            UNITS      
 Inverters                     K                         
  Vinv                        1.0       0.77  volts      
  Vinv                        1.5       0.82  volts      
  Vol (100 uA)                2.0       0.01  volts      
  Voh (100 uA)                2.0       1.78  volts      
  Vinv                        2.0       0.86  volts      
  Gain                        2.0     -16.92             
 Ring Oscillator Freq.                                   
  D1024_THK (31-stg,3.3V)             221.82  MHz        
  DIV512 (31-stg,1.8V)                446.72  MHz        
 Ring Oscillator Power                                   
  D1024_THK (31-stg,3.3V)               0.08  uW/MHz/gate
  DIV512 (31-stg,1.8V)                  0.02  uW/MHz/gate