MOSIS WAFER ACCEPTANCE TESTS RUN: T65U (8RF_8LM_DM) VENDOR: IBM-BURLINGTON TECHNOLOGY: SCN013 FEATURE SIZE: 0.13 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: 8RF_IBM-BURLIN TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.16/0.12 Vth 0.40 -0.43 volts SHORT 20.0/0.12 Idss -194 uA/um Vth 0.44 -0.43 volts Vpt 3.0 -3.1 volts WIDE 20.0/0.12 Ids0 211.4 -146.2 pA/um LARGE 20.0/20.0 Vth -0.23 volts Vjbkd 2.7 -3.0 volts Ijlk <50.0 <50.0 pA Gamma 0.26 0.23 V^0.5 K' (Uo*Cox/2) 276.0 -47.6 uA/V^2 Low-field Mobility 511.55 88.22 cm^2/V*s PROCESS PARAMETERS N+ P+ POLY M1 M2 M3 M4 UNITS Sheet Resistance 6.9 6.9 6.7 0.07 0.05 0.06 0.04 ohms/sq Contact Resistance 10.2 10.3 9.0 0.76 1.56 1.75 ohms Gate Oxide Thickness 32 angstrom PROCESS PARAMETERS M5 M6 M7 N+BLK PPLY+BLK M8 N_W POLY_NON TaN UNITS Sheet Resistance 0.05 0.09 0.01 73.3 332.2 0.01 551 1620.7 59.7 ohms/sq Contact Resistance 2.03 2.28 2.51 2.75 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ D_N_W P+ POLY R_W N_W UNITS Area (substrate) 929 588 1054 1007 aF/um^2 Area (N+active) 10884 aF/um^2 Area (P+active) 10251 aF/um^2 Area (r well) 1209 aF/um^2 Area (d well) 1548 aF/um^2 Fringe (substrate) 15 29 aF/um Overlap (N+active) 404 aF/um Overlap (P+active) 388 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.51 volts Vinv 1.5 0.52 volts Vol (100 uA) 2.0 0.01 volts Voh (100 uA) 2.0 1.18 volts Vinv 2.0 0.55 volts Gain 2.0 -17.55 Ring Oscillator Freq. D1024_THK (31-stg,2.5V) 272.04 MHz DIV1024 (31-stg,1.2V) 398.90 MHz Ring Oscillator Power D1024_THK (31-stg,2.5V) 0.03 uW/MHz/gate DIV1024 (31-stg,1.2V) 0.00 uW/MHz/gate