team

Amitava DasGupta

Professor

Ph.D  Analytical modeling of small geometry MOSFETs with non-uniformly doped channels Indian Institute of Technology Kharagpur, in 1988

M.Tech degree in Electrical Engineering from I.I.T. Madras in 1984

B.E., degree in Electronics and Telecommunication Engineering, Jadavpur University, Kolkata, India

044-2257 4416

adg@ee.iitm.ac.in

Personal Link

  • Dr.Amitava DasGupta received the B.E. degree in Electronics and Telecommunication Engineering from Jadavpur University,Kolkata, India in 1982, M.Tech degree in Electrical Engineering from I.I.T. Madras in 1984 and Ph.D from I.I.T. Kharagpur in 1988. His Ph.D dissertation was on analytical modeling of small geometry MOSFETs with non-uniformly doped channels. He joined as a Lecturer in I.I.T. Kharagpur in the same year. He has been a Faculty member in the Department of Electrical Engineering, I.I.T. Madras since 1993 and is currently a Professor. As a DAAD Fellow, he worked at the Institut for Hochfrequenztechnik, Darmstadt, Germany during 1991-92 and again in 1997.
  • His research interests are in the areas of Semiconductor Device Modeling and Technology and as well as MEMS. He has supervised 25 research scholars for their M.S. (by research) / Ph.D degrees. He has more than 150 research publications in International Journals and Proceedings of International Conferences and has Co-authored a book on Semiconductor Devices Modeling & Technology.He is an Editor of the IETE Technical Review and ISSS Journal of Micro and Smart Systems.He is a Fellow of Indian National Academy of Engineering (INAE)

  • Udit Rawat, Deleep Nair and Amitava DasGupta, "Piezoelectric-on-Silicon Array Resonators with Asymmetric Phononic Crystal Tethering", IEEE Journal of Microelectromechanical Systems (JMEMS), accepted.
  • Shelly Aggarwal, Braineard Eladi Paul, Amitava DasGupta and Dhiman Chatterjee, "Experimental characterization of piezoelectrically actuated silicon micromachined valveless micropump", Microfluidics and Nanofluidics, 21: 2 DOI:10 1007/s10404-016-1837-8, January 2017.
  • Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs", IEEE Trans Electron Devices, vol 63, no 12, pp 4693-4701, Dec 2016.
  • Naveen Karumuri, Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "A Compact Model of Drain Current for GaN HEMTs based on 2DEG Charge Linearization", IEEE Trans Electron Devices, vol 63, no 11, pp 4226-4232, Nov 2016.
  • Nikhil K S, Nandita DasGupta, Amitava DasGupta and Anjan Chakravorty, "Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors", IEEE Trans Electron Devices, vol 63, no 10, pp 4003-4010, Oct 2016.
  • Anushree Tomer, Gourab Dutta, Amitava DasGupta and Nandita DasGupta,"Comparison of Shallow Interface Traps in AlGaN / GaN MIS-HEMT Devices with three different Gate Dielectrics",3 rd International Conference on Emerging Electronics (ICEE), IIT Bombay, 27 - 30 December-2016.
  • Shelly Agarwal, Amitava DasGupta and Dhiman Chatterjee, "Experimental Characterization of Piezoelectrically actuated silicon micromachined valveless micropump",in 2016 International Conference on Microfluidics, Nanofluidics and Lab-on-a-Chip, Dalian, China from 10th June to 12thJune, 2016.
  • Gourab Dutta, Nandita DasGupta, and Amitava DasGupta, "Improved Device Performance of GaN-based MIS-HEMTs by Using Low Temperature Deposited ICP-CVD Si3N4 as Gate Dielectric and Passivation Layer", IUMRS - ICEM 2016, Singapore, July-2016.
  • Amitava DasGupta, "MEMS for RF Applications",Keynote Address, IEEE International Conference on Microelectronics,for Computing and Communication (MicroCom-2016), NIT Durgapur, January-2016.
  • Gourab Dutta, Nandita DasGupta, and Amitava DasGupta, "AlGaN / GaN MIS-HEMT using ICP-CVD Silicon Nitride as gate dielectric",18th International workshop on the Physics of Semiconductor Devices (IWPSD-2015), Bangalore, December 2015.

  • National Merit Certificate awarded by Ministry of Education & Social Welfare, Govt of India for High rank in the Indian Certificate of Secondary Education Examination, 1975 in 1976.
  • T P Saha Gold Medal awarded by Jadavpur University, Calcutta for Achieving the highest aggregate in all theoretical papers in the Bachelor of Electronics & Telecomm Engg Examination in 1982.
  • DAAD Fellow awarded by DAAD, Germany for Research program in Germany in 1991.
  • Best Poster Award awarded by IEEE India ED/MTT Chapter for Poster entitled Improvement in Breakdown field strength of thin thermally grown SiO2 by selective anodic oxidation at 11th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec 2001.
  • Best Poster Award awarded by International Conference on Materials for Advanced Technologies (ICMAT-2009), Singapore for Poster entitled Fabrication of reliable MEMS switches in CPW configuration in 2009.
  • Best Poster/paper Award awarded by Fifteenth International Workshop on Physics of Semiconductor Devices for Poster entitled RF MEMS Switches with Low Pull-in Voltage at 15th International Workshop on Physics of Semiconductor Devices, New Delhi, Dec 2009.
  • INAE Fellow awarded by Indian National Academy of Engineering for Contribution to Engineering in 2011.

    Current Courses

  • 1993 - till date at IIT Madras.
  • COURSES DEVELOPED :
  • A post-graduate level course on High Speed Integrated Circuits.
  • VIDEO LECTURE SERIES: Developed a video lecture series of 40 hours on "Digital Integrated Circuits "for National Program on Technology Enhanced Learning (NPTEL) , IIT Madras. education in collaboration with Education Technology Cell, IIT Madras.

    Previous Courses

  • 1988 -1993 at IIT Kharagpur.
  • COURSES TAUGHT:
  • Semiconductor devices as in Solid State Devices (Undergraduate),Device Modeling (Undergraduate),Semiconductor Device Modeling (Graduate), Compound Semiconductor Devices (Graduate).
  • Circuits as in Basic Electronics (Undergraduate), Introduction to Digital Circuits (Undergraduate), Microprocessors & Microcomputers (Undergraduate),Digital Electronics (Undergraduate), VLSI Design (Undergraduate), Linear Integrated Circuits (Undergraduate), High Speed Integrated Circuits (Graduate).

  • Udit Rawat,Dr Deleep R Nair and Dr Amitava DasGupta, "Piezoelectric-on-Silicon Array Resonators with Asymmetric Phononic Crystal Tethering", IEEE Journal of Microelectromechanical Systems (JMEMS), accepted.
  • Shelly Agarwal, Braineard Eladi Paul, Amitava DasGupta and Dhiman Chatterjee, "Experimental characterization of piezoelectrically actuated silicon micromachined valveless micropump", Microfluidics and Nanofluidics, 21: 2 DOI:10,1007/s10404-016-1837-8, January 2017.
  • Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Low-Temperature ICP-CVD SiNx as Gate Dielectric for GaN-Based MIS-HEMTs", IEEE Trans Electron Devices, vol 63, no 12, pp 4693-4701, Dec 2016.
  • Naveen Karumuri, Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "A Compact Model of Drain Current for GaN HEMTs based on 2DEG Charge Linearization", IEEE Trans Electron Devices, vol 63, no 11, pp 4226-4232, Nov 2016.
  • Nikhil K S , Nandita DasGupta, Amitava DasGupta and Anjan Chakravorty, "Analysis and Modeling of the Snapback Voltage for Varying Buried Oxide Thickness in SOI-LDMOS Transistors", IEEE Trans Electron Devices, vol 63, no 10, pp 4003-4010, Oct 2016.
  • Sarath Gopalakrishnan, Amitava DasGupta and Deleep R Nair, "Study of the Effect of Surface Roughness on the Performance of RF MEMS capacitive switches through 3-dimensional geometric modeling", IEEE Journal of the Electron Devices Society, vol 4, no 6, pp 451-458, 2016.
  • Gourab Dutta, Nandita DasGupta and Amitava DasGupta, "Effect of Sputtered-Al2O3 Layer Thickness on the Threshold Voltage of III-Nitride MIS-HEMTs", IEEE Trans Electron Devices, vol 63, no 4, pp 1450-1458, April 2016.
  • Sreenidhi Turuvekere, Amitava DasGupta and Nandita DasGupta, "Effect of Barrier Layer Thickness on Gate Leakage Current in AlGaN/GaN HEMTs", IEEE Trans Electron Devices, vol 62, no 10 pp 3449-3452, Oct 2015.
  • Nitin Prasad, Prasad Sarangapani, Nikhil K S, Nandita DasGupta, Amitava DasGupta, and Anjan Chakravorty An Improved Quasi-Saturation and Charge Model for SOI-LDMOS Transistors, IEEE Trans Electron Devices, vol 62, no 3, pp 919-926, March 2015.
  • Sreenidhi Turuvekere, Dipendra Singh Rawal, Amitava DasGupta, and Nandita DasGupta, Evidence of Fowler Nordheim Tunneling in Gate Leakage Current of AlGaN/GaN HEMTs at Room Temperature, IEEE Trans Electron Devices, vol 61, no 12,pp 4291-4294, Dec 2014.

  • Co-ordinator, Microelectronics & MEMS Laboratory, IIT Madras since July 2006, (Microelectronics & MEMS Laboratory, IIT Madras is the winner of the Technoshield Award from India Semiconductor Association in 2007 and 2008 This award recognizes excellence achieved in the semiconductor domain by an institution or organization in India).
  • Vice Chairman, for the IEEE Madras Section (6500 members)in the year 2008-2009 and 2009-2010.
  • As Vice Chairman, IEEE Madras Section, organized Seven Faculty Development Programs for faculty members of Engineering Colleges in TamilNadu during the year 2007-2009 This program is being conducted on a regular basis in different cities in TamilNadu to improve the quality of Technical Education.
  • Vice Chairman,- GATE 2009 and GATE 2010, at IIT Madras, Organizing Chairman of GATE 2011(GATE: Graduate Aptitude Test in Engineering is the Common Entrance Test in India for Post Graduate Admissions in Engineering).
  • Organizing Chairperson, "International Conference on MEMS (ICMEMS 2009)", held during 3-5 January 2009 at IIT Madras .
  • Associate Director & Principal Coordinator, "7th Indo-German Winter Academy", held during 13th -19th December, 2009 at IIT Madras .
  • Organizing Secretary, for the "International Workshop on Physics of Semiconductor Devices (IWPSD-2003) held in December, 2003 at IIT Madras .
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