| PhD Viva


Name of the Speaker: Mr. Sujan Sarkar (EE17D004)
Guide: Prof. Amitava Das Gupta
Co-Guide: Prof. Nandita Das Gupta
Online meeting link: https://meet.google.com/ccc-swmr-zek
Date/Time: 5th February 2025 (Wednesday), 11:30 AM
Title: Effect of Epitaxial Layers and Post Metallization Annealing on the Characteristics of InAlN/GaN-based HEMTs

Abstract :

Self-heating is an important phenomenon in GaN HEMT devices, which degrades the performance of HEMTs operating under a biased condition when the power dissipation in HEMT is high. It is essential to understand the effect of different epitaxial layers on self-heating. The effect of the carbon-doped buffer layer and GaN cap layer on self-heating will be discussed. It will be shown that the GaN cap layer helps to reduce self-heating. On the other hand, the carbon-doped buffer layer increases the self-heating effect in HEMTs.