| PhD Seminar

Name of the Speaker: Mr. Masud Rana (EE20D405)
Guide: Dr. Bhaswar Chakrabarti
Venue: ESB-244 (Seminar Hall)
Online meeting link: meet.google.com/aeo-ssnb-yhr
Date/Time: 27th August 2024 (Tuesday), 3:00 PM
Title: Ferroelectric Field Effect Transistors: Design, Characterization and Applications

Abstract :

Hafnium oxide-based Ferroelectric Field-Effect Transistor (FeFET) technology has recently emerged as a non-volatile memory with considerable promise for computing applications. FeFETs offer significant advantages, including low power consumption, fast switching, bidirectional programmability, and compatibility with CMOS technology. However, the practical implementation of FeFET-based computing systems encounters challenges concerning device reliability and variability. The first section of this seminar will focus on the performance of HfO2 FeFETs in terms of variability, retention, and, most importantly, endurance, which remains a significant challenge for FeFET devices. We investigate the degradation of the FeFET gate stack using the charge pumping method, which is the reliable and direct measurement technique to evaluate the degradation of the gate stack of the MOSFET-like structured devices, and propose a program/erase pulse strategy to improve the performance of FeFETs.

The second part of the seminar will explore certain computing applications that have not yet been well-explored in the context of FeFET technology. We propose a biasing scheme and experimentally demonstrate spike time-dependent plasticity (STDP) using a single FeFET device. Very few prior works have investigated FeFETs for STDP, a local learning algorithm useful for event-driven processing tasks. We also discuss the impact of FeFET non-idealities on the performance in STDP-based learning.