| PhD Seminar

Name of the Speaker: Mr. Sourodeep Roy (EE19D414)
Guide: Prof. Enakshi Bhattacharya
Co-Guide: Dr. Bhaswar Chakrabarti
Venue: ESB-244 (Seminar Hall)
Online meeting link: https://meet.google.com/ffm-cjyp-dgi
Date/Time: 16th May 2024 (Thursday), 3:00 PM
Title: SiO_x based RRAMs for brain-inspired Computation

Abstract :

Resistive Random-Access Memories (RRAMs), among the emerging non-volatile memory technologies, have received interest as components in circuits designed for brain-inspired computation, offering an alternative to systems based on Von Neumann's architecture. The capability of RRAM devices to support In-Memory computing, enabling storage and computation at the same location with minimal fabrication complexity, demonstrates their versatility and significance in emerging computing paradigms. We use Inductively Coupled Plasma-Enhanced Chemical Vapor Deposition (ICP-CVD) process deposited SiO_x for the RRAM devices and explore the non-volatile and volatile switching behavior to extract synaptic and dendritic functionalities, respectively. Furthermore, we examine the integration of volatile RRAMs into oscillator circuits and the use of multi-resistance state non-volatile devices in Content Addressable Memory (CAM) circuits.