| PhD Seminar

Name of the Speaker: Mr. Vamshi Krishna Miryala (EE14D010)
Guide: Dr. Kamalesh Hatua
Online meeting link: https://meet.google.com/zwh-pjag-vpg
Date/Time: 15th May 2024 (Wednesday), 2:00 PM
Title: A novel snubber circuit and Active gate driving technique for SiC MOSFET

Abstract :

SiC MOSFETs have emerged as the latest technology switching devices replacing Si-IGBTs in 600V to 1.7kV voltage range. Its worth noting here that SiC MOSFETs can switch five to ten times faster than conventional Si-IGBTs. So extracting the full switching potential of SiC MOSFETs is still a challenging task. The current work proposes a simple passive snubber that enables SiC MOSFETs to switch at its full speed. It also recovers the switching losses in SiC MOSFET with the help of layout inductance present in the converter. The performance of the proposed snubber method is verified in boost converter setup at various loading conditions and its performance is found to be satisfactory. In addition to this, current work also discloses an active gate driving technique to series connect multiple SiC MOSFETs. Series connection of SiC MOSFETs enables power electronic designers to provide the benefits of SiC MOSFET technology to medium voltage converter applications as well. The proposed active gate driver (AGD) is designed to reduce turn-off losses and achieve voltage balancing even in the presence of moderate gate pulse delay mismatches. The proposed gate driving technique is verified in hardware setups that had SiC MOSFETs connected in series.