| PhD Seminar

Name of the Speaker: Mr. Ajay Shanbhag Govindray (EE18D415)
Guide: Prof. Amitava DasGupta
Online meeting link: meet.google.com/igc-nyrp-iua
Date/Time: 10th May 2024 (Friday), 4:00 PM
Title: Compact Model Validation and Extraction of Accurate Thermal Resistance of GaN HEMTs

Abstract

We present the IIT Madras Compact Model (ICM) for GaN HEMTs, a comprehensive charge-based compact model that accurately captures DC, transient, and RF characteristics, including secondary effects like traps, access-region behavior, and self-heating. Our model offers a simplified yet robust approach, requiring only a single parameter set for various device characteristics. Since our model is physics based, it requires much fewer parameters than other available compact models of GaN HEMTs. Validation against industry-standard experimental data confirms its accuracy. Additionally, we introduce a novel method for extracting the thermal resistance (RTH) of GaN on Silicon HEMTs. By pulsing the substrate bias instead of drain or gate biases, we mitigate the impact of traps, resulting in consistent RTH values across different wafers. This approach, validated through our ICM Model, demonstrates improved agreement with experimental data compared to conventional methods, highlighting its reliability in accurately determining thermal resistance in GaN-on-Si HEMTs.