| MS TSA Meeting

Name of the Speaker: Mr. Onkar Bhakare ( EE21S058)
Guide: Dr. Kamalesh Hatua
Venue: CSD-308 (Conference Hall)
Date/Time: 8th January 2023 (Monday), 3:00 PM
Title: Experimental Investigation of Switching Loss Behavior in Si-IGBT and SiC MOSFET, and Control of Leakage Inductance in High-Frequency Transformers

Abstract

This work meticulously investigates power losses in a Dual Active Bridge Series Resonant Converter (DABSRC), focusing on the switching loss behavior of Si IGBT and SiC MOSFET across diverse frequencies. Notably, the study dissects the impact of stored charges on Si IGBT switching losses, identifying optimal operational points for SiC MOSFET and Si IGBT with minimal switching losses. Experimental examination of dead time's influence on IGBT switching losses reinforces these findings, validated through a practical 4.2 kW prototype of an isolated DABSRC with a 600 V DC bus. This work contributes practical insights for enhanced efficiency in power converters.

In a parallel context, the demand for compact power converters highlights the significance of component size, particularly magnetics. Explored in this research is the integration of series inductors within transformer geometry, significantly improving power density. The study further investigates methods to enhance leakage inductance, with a novel approach involving shunt materials integration within the transformer structure. Detailed mathematical analysis, validated through FEA and experimental setups, provides insights into the effectiveness of this approach, addressing limitations in traditional methods focused on planar technology.