Abstract: Gallium nitride (GaN) transistors have switching performance advantages over silicon MOSFETs given their lower terminal capacitances for the same on-resistance and lack of a body diode with reverse recovery loss. Because of these features, Gan FETs can switch at higher frequencies, improving power density and transient performance while maintaining reasonable switching losses. Integrated GaN based power stage with GaN FET and driver in the same package gives a very compact solution for efficient and reliable power delivery given reduced parasitic inductances and superior switching properties of GaN FETs.

For applications with High Power Requirement (say > 2 kW), The current required to be supplied by GaN FET turns out to surpass the rated average current which can be reliably provided by the FETS. An efficient way of delivering such high power is to use N Parallel GaN power stages such that the load current in each stage is reduced by a factor of N, thereby allowing reliable and efficient operation. However, it is observed that the Current is not shared equally among the different stages. In fact, due to delay and Vth mismatches, Extra current is pulled from some of the FETS, hence the switching current and switching voltage overlaps are higher in some stage(s) compared to other stage(s) which leads to rapid aging in some stage(s) causing reliability issues during the lifetime operation. To use this configuration reliably, the ratings of the GaN FETs must be increased or the current level must be reduced, which is not a practical and efficient solution and defeats the purpose of parallel power stages.

This work attempts to mitigate the imbalance in current sharing between different integrated GaN power stages by employing techniques to minimize propagation delay and Vth mismatch between stages. The challenges with real time sensing based correction are also illustrated along with a previous attempt based on real time correction technique.

Event Details
Title: Equitable current distribution in single PWM based multiple GaN power stages connected in parallel for high power applications
Date: July 10, 2026 at 10:00 AM
Venue: Google Meet (https://meet.google.com/xyw-cdzm-zpy)
Speaker: Mr. Arkajyoti Bhattacharya (EE23S037)
Guide: Dr. Qadeer Khan
Type: MS seminar

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