Course Details

Course details of EE5341
Course NoEE5341
Course TitleMOS Device Modeling & Characterization
Course ContentMOS capacitor: C-V characteristics; Effect of metal work function, oxide and interface trapped charges. Threshold voltage. Tunnelling current. MOSFET: Threshold based models of static I-V characteristics: Channel length modulation, field dependent mobility, short channel and narrow width effects; Subthreshold current, Quantum mechanical effects Capacitances, concept of non-reciprocal capacitances. Dynamic behaviour under small and large signals. Surface potential and charge based models. Model parameters and their extraction. SOI MOSFETs, Double Gate MOSFETs and FinFETs.
Course Offered this semesterNo
Faculty Name