• Properties of most widely used compound semiconductors e.g. GaAs, InP, GaN and comparison with silicon.
  • Technology of Compound Semiconductor devices with emphasis on crystal growth, MOCVD, MBE, Ion-implantation, etching and metallization.
  • Problems of MOS devices on GaAs and InP
  • MESFET
  • Heterojunction devices e.g. HEMT and HBT on different material systems
  • Optoelectronic devices e.g. solar cells, photodetectors, LEDs and LASERs on compound semiconductor platforms

Text Books:

VLSI Fabrication Principles by S.K.Ghandhi, Wiley 2008

High-Speed Semiconductor Devices ed S.M.Sze, Wiley 1990

Physics of Semiconductor Devices by Michael Shur, PHI, 1995

Optoelectronics and Photonics by S.O. Kasap, Pearson, 2009

 

Reference:

Nitride Semiconductor Devices ed J.Piprek, Wiley-VCH, 2009