INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: TSMC 035 TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.6/0.4 Vth 0.55 -0.72 volts SHORT 20.0/0.4 Idss 538 -249 uA/um Vth 0.58 -0.69 volts Vpt 9.1 -9.6 volts WIDE 20.0/0.4 Ids0 < 2.5 < 2.5 pA/um LARGE 50/50 Vth 0.51 -0.70 volts Vjbkd 8.6 -8.5 volts Ijlk <50.0 <50.0 pA Gamma 0.58 0.36 V^0.5 K' (Uo*Cox/2) 91.8 -34.9 uA/V^2 Low-field Mobility 404.09 153.63 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameter XL in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCMOS_SUBM (lambda=0.20) -0.05 0.15 thick oxide -0.10 0.15 SCMOS (lambda=0.25) -0.15 0.15 thick oxide -0.25 0.15 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >10.0 <-10.0 volts PROCESS PARAMETERS N+ P+ POLY POLY2 POLY2_ME M1 M2 UNITS Sheet Resistance 77.9 153.6 8.3 44.7 0.07 0.08 ohms/sq Contact Resistance 65.6 126.8 6.6 37.9 1.19 ohms Gate Oxide Thickness 76 angstrom PROCESS PARAMETERS M3 M4 N_W N\PLY UNITS Sheet Resistance 0.07 0.04 988 1034 ohms/sq Contact Resistance 1.03 1.19 ohms COMMENTS: N\POLY is N-well under polysilicon. CAPACITANCE PARAMETERS N+ P+ POLY POLY2 M1 M2 M3 M4 N_W UNITS Area (substrate) 895 1378 109 25 12 8 7 104 aF/um^2 Area (N+active) 4547 35 17 12 10 aF/um^2 Area (P+active) 4578 aF/um^2 Area (poly) 890 48 15 9 7 aF/um^2 Area (poly2) 46 aF/um^2 Area (metal1) 40 15 9 aF/um^2 Area (metal2) 42 13 aF/um^2 Area (metal3) 34 aF/um^2 Fringe (substrate) 277 347 52 28 aF/um Fringe (poly) 62 40 32 23 aF/um Fringe (metal1) 56 33 30 aF/um Fringe (metal2) aF/um Fringe (metal3) 59 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 1.23 volts Vinv 1.5 1.37 volts Vol (100 uA) 2.0 0.20 volts Voh (100 uA) 2.0 2.94 volts Vinv 2.0 1.47 volts Gain 2.0 -17.17 Ring Oscillator Freq. DIV256 (31-stg,3.3V) 190.33 MHz D256_THK (31-stg,5.0V) 134.02 MHz Ring Oscillator Power DIV256 (31-stg,3.3V) 0.15 uW/MHz/gate D256_THK (31-stg,5.0V) 0.30 uW/MHz/gate