MOSIS WAFER ACCEPTANCE TESTS RUN: T68B (MM_NON-EPI) VENDOR: TSMC TECHNOLOGY: SCN018 FEATURE SIZE: 0.18 microns Run type: SKD INTRODUCTION: This report contains the lot average results obtained by MOSIS from measurements of MOSIS test structures on each wafer of this fabrication lot. SPICE parameters obtained from similar measurements on a selected wafer are also attached. COMMENTS: DSCN6M018_TSMC TRANSISTOR PARAMETERS W/L N-CHANNEL P-CHANNEL UNITS MINIMUM 0.27/0.18 Vth 0.50 -0.51 volts SHORT 20.0/0.18 Idss 547 -250 uA/um Vth 0.51 -0.51 volts Vpt 4.8 -5.6 volts WIDE 20.0/0.18 Ids0 14.4 -4.7 pA/um LARGE 50/50 Vth 0.43 -0.42 volts Vjbkd 3.1 -4.3 volts Ijlk <50.0 <50.0 pA K' (Uo*Cox/2) 175.4 -35.6 uA/V^2 Low-field Mobility 416.52 84.54 cm^2/V*s COMMENTS: Poly bias varies with design technology. To account for mask bias use the appropriate value for the parameters XL and XW in your SPICE model card. Design Technology XL (um) XW (um) ----------------- ------- ------ SCN6M_DEEP (lambda=0.09) 0.00 -0.01 thick oxide 0.00 -0.01 SCN6M_SUBM (lambda=0.10) -0.02 0.00 thick oxide -0.02 0.00 FOX TRANSISTORS GATE N+ACTIVE P+ACTIVE UNITS Vth Poly >6.6 <-6.6 volts PROCESS PARAMETERS N+ P+ POLY N+BLK PLY+BLK M1 M2 UNITS Sheet Resistance 6.7 7.8 8.0 59.7 313.6 0.08 0.08 ohms/sq Contact Resistance 10.6 11.0 10.0 4.79 ohms Gate Oxide Thickness 41 angstrom PROCESS PARAMETERS M3 POLY_HRI M4 M5 M6 N_W UNITS Sheet Resistance 0.08 0.08 0.08 0.03 930 ohms/sq Contact Resistance 9.24 14.05 18.39 20.69 ohms COMMENTS: BLK is silicide block. CAPACITANCE PARAMETERS N+ P+ POLY M1 M2 M3 M4 M5 M6 R_W D_N_W M5P N_W UNITS Area (substrate) 942 1163 106 34 14 9 6 5 3 123 125 aF/um^2 Area (N+active) 8484 55 20 13 11 9 8 aF/um^2 Area (P+active) 8232 aF/um^2 Area (poly) 66 17 10 7 5 4 aF/um^2 Area (metal1) 37 14 9 6 5 aF/um^2 Area (metal2) 35 14 9 6 aF/um^2 Area (metal3) 37 14 9 aF/um^2 Area (metal4) 36 14 aF/um^2 Area (metal5) 34 984 aF/um^2 Area (r well) 920 aF/um^2 Area (d well) 582 aF/um^2 Area (no well) 137 aF/um^2 Fringe (substrate) 212 235 41 35 29 21 14 aF/um Fringe (poly) 70 39 29 23 20 17 aF/um Fringe (metal1) 52 34 22 19 aF/um Fringe (metal2) 48 35 27 22 aF/um Fringe (metal3) 53 34 27 aF/um Fringe (metal4) 58 35 aF/um Fringe (metal5) 55 aF/um Overlap (N+active) 895 aF/um Overlap (P+active) 737 aF/um CIRCUIT PARAMETERS UNITS Inverters K Vinv 1.0 0.74 volts Vinv 1.5 0.78 volts Vol (100 uA) 2.0 0.08 volts Voh (100 uA) 2.0 1.63 volts Vinv 2.0 0.82 volts Gain 2.0 -23.72 Ring Oscillator Freq. D1024_THK (31-stg,3.3V) 300.36 MHz DIV1024 (31-stg,1.8V) 363.77 MHz Ring Oscillator Power D1024_THK (31-stg,3.3V) 0.07 uW/MHz/gate DIV1024 (31-stg,1.8V) 0.02 uW/MHz/gate