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Current Students

 

PhD

  • Jaikumar M. G. : Analytical modeling and simulation of SiC Power MOSFETs
  • Anvar A. : Modeling and Simulation of Nanowire Junctions
  • Prasannanjaneyulu B. : Off-state characteristics of AlGaN/GaN HEMTs 
  • Pradeep Dasari : On-state characteristics of AlGaN/GaN HEMTs
  • Akshay K : Modeling and Simulation

MS

  • Sukalpa Mishra : Off-state characteristics of AlGaN/GaN HEMTs

 

Past Students

 

PhD

  • Vijaya Kumar Gurugubelli : Analytical theory of the space-charge electrostatics of nanoscale junctions (currently with Maxim Integrated, Bengaluru)
  • Arvind Ajoy : Real and complex bandstructure for semiconductor nanodevices (Assistant Professor at IIT Palakkad)
  • Saleem Haneefa : Modeling and parameter extraction of solar cells using a power law J-V equation (currently with VSSC, Trivandrum)
  • D. Mahaveer Sathaiya : Modeling of the gate leakage in AlGaN/GaN HEMTs and nitrided oxides (currently with TSMC, Taiwan)

MS

  • Rekha Chithra Thomas : An analytical model of the DC and frequency-dependent 2D and 3D current spreading in forward-biased shallow pn junctions
  • Komail Badami : A comprehensive compact model for electrical coupling between rectangular contacts on a semiconductor
  • K. R. K. Maheswaran : Effect of the ambient field on the I-V characteristics of nanowire devices
  • S. Srikanth : Charge sheet based superjunction power MOSFET
  • S. Balaji : Effect of oxide fixed charge on the performance of superjunction devices
  • P. V. M. Ramanamurthy : Piezoelectric microvalve
  • Vishnu Mohan P. : Closed-form modelling of 3D spreading resistance between arbitrarily located rectangular and circular electrodes
  • Pradeep Kumar : Electroless nickel on polished silicon
  • D. Mahaveer Sathaiya : Closed-form modelling of thermionic-field emission through a triangular potential barrier
  • R. Ramakrishna Rao : Simple modelling of the electrons in the donor layer and the channel of high electron mobility transistors (HEMTs)
  • A. Sarat Chandra : Reverse engineering of a high frequency BJT
  • J. Bannerjee : Silicon metallization by electrochemical techniques
  • D. Sridhar : Cost-effective reliable all-plated bilayer metal contacts on silicon devices

Awards to Past and Current Students

  • Anvar A. (PhD) : Best Poster Award under Device Modeling and Simulation category in Intl. Workshop on the Physics of Semiconductor Devices (IWPSD) 2015 for the paper titled A new solution to the continuity equation in p-n junction solar cells for closed-form modeling of Jsc under arbitrary optical generation.
  • Vijaya Kumar Gurugubelli (PhD) : 2015 Institute Research Award, from IIT Madras, for the quality and quantity of research work carried out in PhD.
  • Mahaveer Sathaiya (PhD) : 2008 TechnoInventor Award, from India Semiconductor Association for his PhD thesis titled Modeling of the Gate leakage in AlGaN/GaN HEMTs and Nitrided Oxides.
  • S. Balaji (MS) : 2007 Outstanding Research Award, from TSMC, Taiwan for his work on Superjunction Devices.
  • N. Venkatsubramaniam (BTech.) : 1999 Achim Bopp Prize for the best UG project in EE Department of IITM, for his work on Electroless-plating and Electroplating on Silicon.
  • Anvar A. (PhD) : 2015 Teaching Assistant Recognition Award for the contributions towards conducting academic and departmental activities.
  • Vijaya Kumar Gurugubelli (PhD) : 2012 Teaching Assistant Recognition Award for the contributions towards conducting academic and departmental activities.
  • Vijaya Kumar Gurugubelli (PhD) : 2012 Excellence in Research Travel Grant.

© Karmalkar, 16 October 2017