Integrated Circuits and Systems group, IIT Madras

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courses:ee6361_2019:start [2019/02/12 06:15]
janakiraman [Class 4 (8 Feb 2019)]
courses:ee6361_2019:start [2019/04/12 07:18] (current)
janakiraman
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 [[http://​www.ee.iitm.ac.in/​~janakiraman/​courses/​EE6361/​Jan-2019/​material/​20190208_IITM_SRAM_C3.pdf|Lecture Slides]] [[http://​www.ee.iitm.ac.in/​~janakiraman/​courses/​EE6361/​Jan-2019/​material/​20190208_IITM_SRAM_C3.pdf|Lecture Slides]]
 +
 +===== Class 5 (15 Feb 2019) =====
 +  * BTI Stress
 +  * Memory Testing
 +  * Power
 +
 +
 +[[http://​www.ee.iitm.ac.in/​~janakiraman/​courses/​EE6361/​Jan-2019/​material/​20190215_IITM_SRAM_C4.pdf|Lecture Slides]]
 +
 +===== Class 6 (22 Feb 2019) =====
 +  * Variation characterization
 +
 +
 +[[http://​www.ee.iitm.ac.in/​~janakiraman/​courses/​EE6361/​Jan-2019/​material/​20190222_IITM_SRAM_C5.pdf|Lecture Slides]]
 +
 +===== Class 7 (1 Mar 2019) =====
 +  * Variation characterization (continued ...)
 +
 +
 +[[http://​www.ee.iitm.ac.in/​~janakiraman/​courses/​EE6361/​Jan-2019/​material/​20190301_IITM_SRAM_C6.pdf|Lecture Slides]]
 +
 +===== Class 8 (8 Mar 2019) =====
 +  * Course project description - In Memory Computing
 +
 +
 +===== Class 9 (15 Mar 2019) =====
 +  * Basics of DRAM
 +  * Definition of Embedded
 +  * Requirement for short BLs in DRAMs
 +  * Transfer ratio 
 +  * Retention time/ Refresh rate analysis
 +  * Power supplies required for eDRAM
 +  * Advantages of eDRAM over eSRAM
 +
 +[[https://​goo.gl/​forms/​FG3QAKgnXLlHb4bB3|In class Quiz]]
 +
 +[[http://​www.ee.iitm.ac.in/​~janakiraman/​courses/​EE6361/​Jan-2018/​material/​EE6361-eDRAM-Janakiraman-2018.pdf|eDRAM Lecture Slides (2018)]]
 +
 +===== Class 10 (22 Mar 2019) =====
 +  * Write time calculation
 +  * Hierarchical sensing
 +  * 3T Micro Sense Amp
 +  * Micro Sense Amp Evolution
 +
 +Barth, J. et al., “A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier,​” IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 43, NO. 1, JANUARY 2008. [[http://​ieeexplore.ieee.org/​document/​4443182/​|PDF]]
 +
 +[[https://​forms.gle/​7fZHaL8i231yZ9VW7|In class quiz]]
 +
 +===== Course Project =====
 +**SRAM based In Memory Compute circuit design to implement the Multiply Accumulate Operation**
 +==== Reference papers ====
 +
 +  - A. Biswas and A. P. Chandrakasan,​ "​CONV-SRAM:​ An Energy-Efficient SRAM With In-Memory Dot-Product Computation for Low-Power Convolutional Neural Networks,"​ in IEEE Journal of Solid-State Circuits, vol. 54, no. 1, pp. 217-230, Jan. 2019. doi: 10.1109/​JSSC.2018.2880918
 +  - M. Kang, S. K. Gonugondla, A. Patil and N. R. Shanbhag, "A Multi-Functional In-Memory Inference Processor Using a Standard 6T SRAM Array,"​ in IEEE Journal of Solid-State Circuits, vol. 53, no. 2, pp. 642-655, Feb. 2018. doi: 10.1109/​JSSC.2017.2782087
 +
 +===== Class 11 (29 Mar 2019) =====
 +  * Read time calculation
 +  * SOI Technology - Floating body effects on eDRAM
 +  * Gated Feedback Sense Amplifier
 +
 +G. Fredeman et al., "A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access,"​ in IEEE Journal of Solid-State Circuits, vol. 51, no. 1, pp. 230-239, Jan. 2016.
 +doi: 10.1109/​JSSC.2015.2456873 [[https://​ieeexplore.ieee.org/​stamp/​stamp.jsp?​tp=&​arnumber=7210238|PDF]]
 +
 +[[https://​forms.gle/​8de7B43mobrrEb7A9|In class quiz]]
 +
 +
 +===== Class 12 (5 Apr 2019) =====
 +  * Variability study
 +  * Thick Oxide Word-line drivers
 +  * Thin Oxide Word-line drivers
 +[[https://​forms.gle/​9Y1RgQBuT4qiugpH7|In class quiz]]
 +
 +
 +===== Class 12 (5 Apr 2019) =====
 +  * Redundancy and  Testing
 +  * Non Volatile Memories
 +  * Charge Trap Transistor
 +
 +[[https://​forms.gle/​7NgWNBcYsndjrwSy6|In class quiz]]
 +
 +