This shows you the differences between two versions of the page.
| Both sides previous revision Previous revision Next revision | Previous revision | ||
|
courses:ee6361_2019:start [2019/03/29 07:19] janakiraman |
courses:ee6361_2019:start [2019/04/23 10:29] janakiraman [Class 13 (12 Apr 2019)] |
||
|---|---|---|---|
| Line 113: | Line 113: | ||
| [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2018/material/EE6361-eDRAM-Janakiraman-2018.pdf|eDRAM Lecture Slides (2018)]] | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2018/material/EE6361-eDRAM-Janakiraman-2018.pdf|eDRAM Lecture Slides (2018)]] | ||
| - | ===== Class 10 (22 Mar 2018) ===== | + | ===== Class 10 (22 Mar 2019) ===== |
| * Write time calculation | * Write time calculation | ||
| * Hierarchical sensing | * Hierarchical sensing | ||
| Line 130: | Line 130: | ||
| - M. Kang, S. K. Gonugondla, A. Patil and N. R. Shanbhag, "A Multi-Functional In-Memory Inference Processor Using a Standard 6T SRAM Array," in IEEE Journal of Solid-State Circuits, vol. 53, no. 2, pp. 642-655, Feb. 2018. doi: 10.1109/JSSC.2017.2782087 | - M. Kang, S. K. Gonugondla, A. Patil and N. R. Shanbhag, "A Multi-Functional In-Memory Inference Processor Using a Standard 6T SRAM Array," in IEEE Journal of Solid-State Circuits, vol. 53, no. 2, pp. 642-655, Feb. 2018. doi: 10.1109/JSSC.2017.2782087 | ||
| - | ===== Class 10 (22 Mar 2018) ===== | + | ===== Class 11 (29 Mar 2019) ===== |
| * Read time calculation | * Read time calculation | ||
| * SOI Technology - Floating body effects on eDRAM | * SOI Technology - Floating body effects on eDRAM | ||
| * Gated Feedback Sense Amplifier | * Gated Feedback Sense Amplifier | ||
| + | |||
| + | G. Fredeman et al., "A 14 nm 1.1 Mb Embedded DRAM Macro With 1 ns Access," in IEEE Journal of Solid-State Circuits, vol. 51, no. 1, pp. 230-239, Jan. 2016. | ||
| + | doi: 10.1109/JSSC.2015.2456873 [[https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7210238|PDF]] | ||
| [[https://forms.gle/8de7B43mobrrEb7A9|In class quiz]] | [[https://forms.gle/8de7B43mobrrEb7A9|In class quiz]] | ||
| + | |||
| + | |||
| + | ===== Class 12 (5 Apr 2019) ===== | ||
| + | * Variability study | ||
| + | * Thick Oxide Word-line drivers | ||
| + | * Thin Oxide Word-line drivers | ||
| + | [[https://forms.gle/9Y1RgQBuT4qiugpH7|In class quiz]] | ||
| + | |||
| + | |||
| + | ===== Class 13 (12 Apr 2019) ===== | ||
| + | * Redundancy and Testing | ||
| + | * Non Volatile Memories | ||
| + | * Charge Trap Transistor | ||
| + | |||
| + | [[https://forms.gle/7NgWNBcYsndjrwSy6|In class quiz]] | ||
| + | |||
| + | Balaji Jayaraman, Derek Leu, Janakiraman Viraraghavan, Alberto Cestero, Ming Yin, John Golz, Rajesh R. Tummuru, Ramesh Raghavan, Dan Moy, Thejas Kempanna, Faraz Khan, Toshiaki Kirihata, Subramanian Iyer 80Kb Logic Embedded High-K Charge Trap Transistor based Multi-Time-Programmable Memory with no Added Process Complexity J. Solid State Circuits,53(3): 949-960 (2018) [[https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8252917&tag=1|PDF]] | ||
| + | |||
| + | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/eNVRAM_Talk_at_IISc_Sep26_v15.pdf|eNVM Lecture Slides ]] | ||