This shows you the differences between two versions of the page.
Both sides previous revision Previous revision Next revision | Previous revision Next revision Both sides next revision | ||
courses:ee6361_2019:start [2019/02/11 08:32] janakiraman [Class 4 (8 Feb 2019)] |
courses:ee6361_2019:start [2019/02/12 06:15] janakiraman [Class 4 (8 Feb 2019)] |
||
---|---|---|---|
Line 59: | Line 59: | ||
===== Class 3 (1 Feb 2019) ===== | ===== Class 3 (1 Feb 2019) ===== | ||
- | * 6T SRAM cell | + | * Alternative Cell Types |
- | * Static/ Read and Write noise margins | + | - Split word line with single ended read |
- | * Read/ Write/ Hold and Access failures | + | - Assymetric cells |
- | * Column interleaving | + | - Decouple Read/Write Cells (8T Cells) |
+ | - Regenerative Feedback | ||
+ | * Impact of Variation | ||
[[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190201_IITM_SRAM_C2.pdf|Lecture Slides]] | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190201_IITM_SRAM_C2.pdf|Lecture Slides]] | ||
===== Class 4 (8 Feb 2019) ===== | ===== Class 4 (8 Feb 2019) ===== | ||
- | * 6T SRAM cell | + | * Redundancy |
- | * Static/ Read and Write noise margins | + | * Modes of failure |
- | * Read/ Write/ Hold and Access failures | + | * Assist Circuits |
- | * Column interleaving | + | |
[[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190208_IITM_SRAM_C3.pdf|Lecture Slides]] | [[http://www.ee.iitm.ac.in/~janakiraman/courses/EE6361/Jan-2019/material/20190208_IITM_SRAM_C3.pdf|Lecture Slides]] |