EE5250
Credits:
3
Course name:
Semiconductor Power Devices
Breakdown phenomena and break down voltage enhancement in PN junctions, Transistors and Thyristors - Heavy doping and high injection level effects in PIN diodes and transistors - Bipolar power transistor characteristics -Thermal properties and secondary breakdown phenomena - MOS power transistor and IGBT structures, design considerations and their switching characteristics- Silicon Controlled Rectifiers, GTO and bidirectional thyristors.