EC3101
Solid State Devices
Valence band and Energy band models of intrinsic and extrinsic
semiconductors. Thermal equilibrium carrier concentration. Carrier
transport by drift, resistivity. Excess carriers, lifetime, carrier transport by
diffusion, Continuity equation. Quantitative theory of PN junctions : Steady
state I-V characteristics under forward bias, reverse bias and illumination.
Dynamic behavior under small and large signals. Qualitative theory of
breakdown mechanisms. Quantitative theory of bipolar junction transistors
having uniformly doped regions. Static characteristics in active and
saturation regions. Emitter efficiency, transport factor, transit time, (and
their
calculation as functions of frequency. Charge control description. Theory of
Field Effect Transistors : Static characteristics of JFETs. Analysis of MOS
structure. Calculation of threshold voltage. Static I-V characteristics of
MOSFETs.
1.‘Solid State Electronic Devices’ by Ben G. Streetman and Sanjay
Banerjee,
Prentice Hall International, Inc.
2.‘Semiconductor Devices Physics and Technology’ by S.M.Sze, John
Wiley & Sons.
3.‘Semiconductor Devices Modelling and Technology’ by Nandita Das
Gupta
and Amitava Das Gupta, Prentice Hall of India Pvt.Ltd.
1.‘Physics of Semiconductor Devices’ by S.M. Sze, John Wiley and Sons.
2.‘Introduction to Semiconductor Materials and Devices’ by M.S. Tyagi,
John
Wiley and Soks.