Research and Development: Focus Areas

High Speed Electronic and Optoelectronic Devices

• GaN, GaAs & InP based BJTs, MOSFETs, HEMTs, LEDs & Photodetectors

• Silicon Photonics: New Devices for Sensor & Communication Systems

Micro Electro Mechanical Systems (MEMS) & Bio-sensors

• Optical MEMS (Variable Optical Attenuators, Micromirrors)

• Sensors (Pressure Sensors and Accelerometers)

• Actuators (Micropumps and microvalves)

• Extraction of parameters (Young’s modulus, residual stress, stiction force)

• BioMEMS (Triglyceride and urea sensors)

• RF MEMS (RF switches and resonators)

• Microfluidics (Conventional and Digital)

Modelling of Semiconductor Devices

• Power and high frequency Semiconductor devices (AlGaN/GaN HEMTs with field plates, Superjunction devices,  Power MOSFETs, Spreading resistance modelling)

• 3-Dimensional modelling for small goemetry devices (SOI MOSFETs, FinFETs)

• Quantum mechanical modelling – self-consistent solution of Poisson and Schrodinger equations (Resonant Tunneling Diodes, Short Channel MOSFETs)

• Modelling of Heterostructure devices (HEMTs, Si/SiGe MOSFETs)

• Compact Modelling (SiGe/SiGe:C HBTs, LD-MOSFETs, CNFETs)

Other Research

• Polycrystalline, porous and amorphous silicon (Carrier transport in polycrystalline and amorphous silicon thin films, Passivation techniques, Thin film transistors, Sensors)

• Silicon On Insulator (SOI) MOSFETs and ICs (Technology development, New device concepts)

• Ultra-thin gate dielectrics for MOSFETs (High-k gate dielectrics, Ultra-thin (<2 nm) SiO2 growth and characterization)