List of significant publications based on the work carried out in Microelectronics and MEMS laboratory during the following years (1998-2010)

• Rathnamala Rao, Nandita DasGupta and Amitava DasGupta, Study of Random Dopant Fluctuation effects in FD-SOI MOSFET using Analytical Threshold Voltage Model, IEEE Trans. On Device and Materials Reliability, Vol.10, No.2,pp247-253, June 2010, 2010.
  
  
• J. Jacob, A. DasGupta, M. Schroter, A. Chakravorty, Modeling Non-Quasi-Static Effects in SiGe HBTs, IEEE Trans. Electron Devices, vol. 57, no. 7, pp. 1559-1566, , 2010.
  
  
• R. E. Fernandez, S. Stolyarova, A. Chadha, E. Bhattacharya and Y. Nemirovsky, MEMS composite Porous Silicon/Polysilicon cantilevers for biosensing applications, IEEE Sensors J., Vol 9, Issue 12, Dec. 2009 Page(s):1660 - 1666, 2009.
  
  
• Aritra Dey, Anjan Chakravorty, Nandita DasGupta and Amitava DasGupta, Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T Double-Gate MOSFETs, IEEE Trans. Electron Devices, Vol.55, no.12, pp3418-25, December 2008., 2008.
  
  
• Souvik Basu, Anil Prabhakar and Enakshi Bhattacharya, Estimation of stiction force from electrical and optical measurements on cantilever beams, IEEE/ASME J. of MEMS, Vol. 16, No. 5 (October 2007) 1254-1262, 2007.
  
  
• L Sujatha and Enakshi Bhattacharya, Enhancement of the sensitivity of pressure sensors with a composite Si/porous silicon membrane, J. Micromech. Microeng. 17 (2007) 1605-1610.

• S. Balaji and S. Karmalkar, “Effects of Oxide Fixed Charge on the Breakdown Voltage of Superjunction Devices”, IEEE Electron Device Lett., vol. 28, No. 3, pp. 229-231, March 2007.
  
  
• K. N. Bhat, R. Joseph Daniel and Enakshi Bhattacharya, Stable passivation technique for high temperature polycrystalline silicon on insulator (PSOI) MOSFETs for MEMS integration, Electronics Letters 42, Issue 12(2006)721-722.
  
  
• S. Karmalkar and N. Soudabi, “A Closed-form Model of the Channel Electric Field Under the Field Plate in a HEMT”, IEEE Trans. Electron Devices, vol. 53, no. 10, pp. 2430-2437, October 2006.
  
  
• B. Bindu, N. Lakshmi, K.N. Bhat and Amitava DasGupta, “Design of single-gate n-channel and p-channel MOSFETs with enhanced current-drive due to simultaneous switching of front and back channels in SOI CMOS technology”, Solid-State Electronics, vol. 50, Issue 7-8, pp. 1359-1367, July-August 2006.

• Manjula S.R., Teweldebrhan Kifle, E. Bhattacharya and K.N. Bhat, Physical Model for the Resistivity and Temperature Co-efficient of Resisitivity in  Heavily Doped Polysilicon, IEEE Trans. Electron Devices. 53, Issue 8 (2006) 1885-1892
  
  
• B. Bindu, Nandita DasGupta and Amitava DasGupta, “Analytical Model of Drain Current of Si/SiGe Heterostructure p-channel MOSFETs for Circuit Simulation”, IEEE Trans. Electron Devices, vol. 53, pp. 1411 - 1419, June 2006.
  
  
  
• Dnyanesh S. Havaldar, Guruprasad Katti, Nandita DasGupta and Amitava DasGupta, “Subthreshold current and threshold voltage model of FinFETs based on analytical solution of 3-D Poisson equation”, IEEE Trans. Electron Devices, vol. 53, pp. 737 -742, April 2006
  
  
• S. Karmalkar, Naresh Satyan and D. Mahaveer Sathaiya, “On Resolution of the Mechanism for Reverse Gate Leakage in AlGaN / GaN HEMTs”, IEEE Electron Device Lett., vol. 28, pp. 87-89, February 2006.
  
  
• S. Karmalkar, Vishnu Mohan P. and Presenna Kumar, “A Unified Compact Model of Electrical and Thermal 3-D Spreading Resistance Between Eccentric Rectangular and Circular Contacts”, IEEE Electron Device Lett., vol. 26, no. 12, pp. 909-912, December 2005.
  
  
• Vaibhav G. Marathe, Roy Paily, Amitava DasGupta and Nandita DasGupta, “A model to study the effect of selective anodic oxidation on ultrathin gate oxides”, IEEE Trans. Electron Devices, vol. 52, no.1, pp.118-121, January 2005. (Times cited : 3)
  
  
• Ravneet Singh, Roy Paily, Amitava DasGupta, Nandita DasGupta, Pankaj Misra and Lalit M. Kukreja, “Laser Induced Oxidation for growth of ultrathin gate oxide”, Electronics Letters, vol. 40,   no. 25, pp. 1606-1607, December 2004
  
• Guruprasad Katti, Nandita DasGupta and Amitava DasGupta, “Threshold voltage model for mesa isolated small geometry fully depleted SOI MOSFETs based on analytical solution of 3-D Poisson’s equation”, IEEE Trans. Electron Devices, vol. 51, no.7, pp.1169-1177, July 2004. (Times cited : 4)
  
  
• M.R. Ravi, Amitava DasGupta & Nandita DasGupta, “Effect of Sulfur Passivation and Polyimide capping on InGaAs-InP PIN photodetectors”, IEEE Trans. Electron Devices, vol. 50, no.2, pp. 532-534, February 2003. (Times cited : 6)
  
  
• S. Karmalkar, M. S. Shur and R. Gaska, “GaN-based Power High Electron Mobility Transistors”, Chapter 3 in Wide Energy Bandgap Electronic Devices (pp. 175-218), edited by Fan Ren, World Scientific (2003). (Times cited: 9)
  
• S. Karmalkar, D. Mahaveer Sathaiya and Michael Shur, “Mechanism of the Reverse Gate Leakage in AlGaN / GaN HEMTs”, Appl. Phys. Lett., vol. 82, No. 22, June 2003. (Times cited: 13)
  
  
• R. Ravi Kumar Reddy, I. Basu, E. Bhattacharya and A. Chadha, “Estimation of Triglycerides by a Porous Silicon based Potentiometric Biosensor”, Current Applied Physics 3 (2003) 155–161 (Times cited 10)
  
  
• S. Karmalkar and D. Mahaveer Sathaiya, “Unified Closed-form Model of Thermionic-field and Field Emissions through a Triangular Potential Barrier”, Appl. Phys. Lett., vol. 82, No. 9, pp. 1431-1433, March 2003.  (Times cited 1)
  
• Roy Paily, Amitava DasGupta and Nandita DasGupta, “Improvement in Electrical Characteristics of Ultra-Thin Thermally Grown SiO2 by Selective Anodic Oxidation”, IEEE Electron Device Lett., Vol.23, no.12, pp. 707-709, Dec.2002. (Times cited: 7)
  
  
• S. Karmalkar, N. Venkatsubramaniam, and Stimit Oak, “DC and periodic reverse electroplating of Semiconductor Surfaces Having Adjacent P-type and N-type Areas”, J. Electrochem. Soc., vol.149, pp. C429-C431, August 2002. (Times cited 1)
  
• E. Anulekha Manjari, A. Subrahmanyam, N. DasGupta & A. DasGupta, “Electrical characterization of Metal-Insulator-Semiconductor capacitors with xerogel as dielectric”, Applied Physics Letters, vol.80, no.10, pp. 1800-1802, March 11, 2002. (Times cited : 3)
  
  
• Roy Paily, Amitava DasGupta, Nandita DasGupta, Pijush Bhattacharya, Pankaj Misra, Tapas Ganguli, Lalit M.Kukreja, A.K. Balamurugan, S. Rajagopalan & A.K. Tyagi, “Pulsed Laser Deposition of TiO2 for MOS Gate Dielectric”, Applied Surface Science, vol. 187, pp.297-304, Feb. 2002. (Times cited : 10)
  
• S. Karmalkar, J. Deng, M. S. Shur and R. Gaska, “RESURF AlGaN / GaN HEMT for very high voltage power switching”, IEEE Electron Device Lett., vol. 22, pp. 373-375, August 2001. (Times cited: 7)   
          
• R. Ravi Kumar Reddy, A Chadha and E. Bhattacharya, Porous Silicon based Potentiometric Triglyceride Biosensor, Biosensors and Bioelectronics 16(2001)313-317. (Times cited 14)
  
  
• S. Karmalkar and Umesh Mishra, "Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using A Field Plate", IEEE Trans. Electron Devices, vol. 48, pp.1515-1521, August 2001. (Times cited: 13)
  
  
• S. Karmalkar and Girish R., “A simple yet comprehensive unified physical model of the 2-dimensional electron gas in delta-doped and uniformly doped high electron mobility transistors”, IEEE Trans. Electron Devices, vol. 47, pp. 11-23, January 2000. (Times cited : 5)
  
  
  
• S. Karmalkar and J. Banerjee, “A study of immersion processes of activating polished crystalline silicon for autocatalytic electroless deposition of palladium and other metals”, J. Electrochem. Soc., vol.146, pp. 580-584, February 1999.   (Times cited: 16)
  
  
• N.DasGupta & A.DasGupta, “A new SPICE MOSFET Level-3 like model of HEMT’s for circuit simulation”, IEEE Trans. Electron Devices, vol. 45, no.7, 1494-1500, July 1998. (Times cited : 7)