Recent Publications

1. G S Jayadeva  and Amitava DasGupta, “Analytical Approximation for the Surface Potential in n-channel MOSFETs considering Quantum Mechanical Effects”, IEEE Trans. Electron Devices, pp. 1820-1828, August 2010.

2. J. Jacob, A. DasGupta, M. Schr�ter and A. Chakravory, “Modeling Non-Quasi-Static Effects in SiGe HBTs”, IEEE Trans. Electron Devices, pp. 1559-1566, July 2010.

3. Rathnamala Rao, Nandita DasGupta and Amitava DasGupta, “Study of Random Dopant Fluctuation effects in FD-SOI MOSFET using analytical threshold voltage model”, IEEE Trans. On Device and Materials Reliability, pp. 247-253, June 2010.

4. Jaibir Sharma and Amitava DasGupta, “Effect of stress on the pull-in voltage of membranes for MEMS application”, Journal of Micromech. and Microengg., vol. 19, issue 11, (Article No. 115021), Nov. 2009.

5. Binsu J Kailath, Amitava DasGupta, Nandita DasGupta, B N Singh and L M Kukreja, “Growth of Ultra-thin SiO₂ by Laser Induced Oxidation”, Semiconductor Science & Technology, Vol.24, Issue 10, (Article No. 105011), Oct. 2009.

6. T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, “Reduced Charge Trapping in GaN MIS using Novel Gate Oxide Deposition Technique”, Electronics Letters, Vol. 45, no. 10, pp. 527-528, May 7, 2009.

7. Jaibir Sharma and Amitava DasGupta, “Fabrication of reliable RF MEMS switches in CPW configuration”, Advanced Materials Research, Vol. 74, pp 259-263, 2009.

8. G.S. Jayadeva and Amitava DasGupta, “Compact model of short channel MOSFETs considering quantum mechanical effects”, Solid State Electronics, Vol.53, pp.649-657, June 2009.

9. Rathnamala Rao, Guruprasad Katti, Dnyanesh S. Havaldar, Nandita DasGupta and Amitava DasGupta, “Unified Analytical Threshold Voltage Model for Non-uniformly doped Dual Metal Gate Fully Depleted Silicon-On-Insulator MOSFETs”, Solid State Electronics, Vol.53, pp.256-265, March 2009.

10. T. Sreenidhi, K. Baskar, Amitava DasGupta and Nandita DasGupta, “Reactive ion etching of GaN in SF₆ + Ar and SF₆ + N₂ plasma”, Semicond. Sci. Technol., Vol.23, Issue 12, (Article No. 125019), Dec. 2008.

11. Aritra Dey, Anjan Chakravorty, Nandita DasGupta and Amitava DasGupta, “Analytical model of subthreshold current and slope for asymmetric 4-T and 3-T Double-Gate MOSFETs”, IEEE Trans. Electron Devices, pp. 3442-3449, December 2008.

12. Jaibir Sharma and Amitava DasGupta, “A low temperature wet release process for low stiffness structures”, Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043007-1-5, October-December 2008.

13. Jaibir Sharma and Amitava DasGupta, “Extraction of Young's modulus and residual stress of structural materials through measurement of pull-in voltage and off-capacitance of beams”, Journal of Micro/Nanolithography, MEMS, and MOEMS (JM3), Vol. 7, No. 4, pp. 043020-1-6, October-December 2008.

14. Binsu J Kailath, Amitava DasGupta, and Nandita DasGupta “Electrical and reliability characteristics of MOS devices with ultrathin SiO2 grown in nitric acid solutions”, IEEE Trans. On Device and Materials Reliability, vol.7, no.4, pp. 602-610, Dec. 2007

15. B. Bindu, Nandita DasGupta and Amitava DasGupta, “A unified model for gate-capacitance voltage characteristics and extraction of parameters of Si/SiGe heterostructure PMOSFETs”, IEEE Trans. Electron Devices, vol. 54, pp. 1889 - 1896, August 2007.

16. Binsu J. Kailath, Amitava DasGupta and Nandita DasGupta, “Optimisation of ac anodisation parameters for the improvement of electrical properties of thermally grown ultrathin gate oxide”, Solid State Electronics, Vol.51, pp.762-770, May 2007.

17. K.N.Bhat, A.DasGupta, P.R.S.Rao, N.DasGupta, E.Bhattacharya, K.Sivakumar, V.Vinoth Kumar, L.Helen Anitha, J.D.Joseph, S.P.Madhavi, and K.Natarajan "Wafer Bonding -A Powerful Technique for MEMS", Indian Journal of Pure and Applied Physics, vol.45, no.4, pp. 311-316, April 2007.

• Semiconductor Device Modelling and Technology
• MEMS

• Ph.D. from. I.I.T. Kharagpur in 1988
• M.Tech from I.I.T. Madras in 1984
• B.E.(ECE) from Jadavpur University, Kolkata