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July 2019

: Modelling and Control of Non-isolated single-input multi-output (SIMO) DC-DC Converters

July 22 @ 10:30 am - 11:30 am
ESB – 244

Title:  Modelling and Control of Non-isolated single-input multi-output (SIMO) DC-DC Converters Date:  22/07/2019 Time:  10.30 A.M Venue:  ESB 244 Speaker:  Sreeshma M (EE16S012) Guide:  Dr. Arun D. Mahindrakar Co-Guide: Dr. Ramkrishna Pasumarthy   GTC Members: Dr. Sridharan K (Chairperson) (EE) Dr. Joel George M (AE) ABSTRACT Many battery operated portable devices, such as, LCD or CCD subsystems, mobile phones, digital cameras etc. include sub-modules that can provide different functionalities. These sub-modules demand power supply at different voltage levels and polarities.…

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Compact Diffractive Elements for the generation and study of Orbital Angular Momentum beams through scattering media

July 22 @ 4:00 pm - 5:00 pm
ESB – 244

Speaker: Sruthy J L(EE16S021) Date      : July 22, 2019 (Monday) Time     : 4.00 PM Venue   : ESB 244, Seminar hall Guide    : Dr. Shanti Bhattacharya   Abstract Structured light refers to optical beams with modulated amplitude, phase or polarization. A Gaussian beam generated by a laser source can be structured to have helical wavefront by inducing a phase modulation of the form = , is the azimuthal phase angle,l is an integer. Such beams carry orbital angular momentum (OAM) with…

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Characterization of Random Telegraph Noise (RTN) in SiGe channel PMOS transistors

July 23 @ 4:00 pm - 5:00 pm
ESB – 244

Date and Time- 23rd July (Tuesday) at 4 PM Venue – ESB 244 Speaker- Pavan CH L N (EE13D038) Guide: – Dr. Deleep R Nair   Abstract: One of the recent reliability concerns of scaled MOS transistors is Random Telegraph Noise (RTN). It is caused by fluctuations in number and mobility of charge carriers due to discrete traps in the gate insulator stack. It results in performance fluctuation of the device, characterized by threshold voltage fluctuation. Silicon-Germanium (SiGe) has been identified as an…

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Mechanism and Enhancement of the Breakdown Voltage in Gallium Nitride High Electron Mobility Transistors

July 26 @ 3:00 pm - 4:00 pm
ESB – 244

Date                : 26 July 2019 (Fri) Time               : 03.00p.m. Venue             : ESB 244 Speaker          : B Prasannanjaneyulu (EE15D033) Guide              : Dr. ShreepadKarmalkar   ABSTRACT   Gallium Nitride High Electron Mobility Transistors show a hard and high breakdown of several tens of volts under deep OFF-state gate bias but much less soft breakdown of just a few tens of volts for near-threshold OFF-state conditions. The hard breakdown is known to be due to impact ionization.We establish that the low…

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November 2019

4th International Conference on Condition Assessment Techniques in Electrical Systems (CATCON 2019)

November 21 @ 8:00 am - November 23 @ 5:00 pm
IC&SR,
Prof. R. Sarathi, IIT Madras, Chennai, Tamil Nadu 600036 India

Indian Institute of Technology Madras, IEEE DEIS society, Kolkatta and IEEE Madras section have proposed to organise the 4th International Conference on Condition Assessment Techniques in Electrical Systems (CATCON 2019), during 21-23 Nov 2019. This is IEEE technically sponsored biennial conference. This conference is being organized for the fourth time, which is in line with the present day requirements in the global scenario of various condition assessment techniques for a variety of electrical systems. for more information

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