Data communication between nodes of a network is a central problem in all modern communication systems. Several
applications form multihop wireless networks and demand high network throughput. The study of the capacity of these
multihop networks is an open problem. One of the approaches to determine maximum achievable network throughput is cross
layer optimization. As wireless networks are interference limited, the optimization involves scheduling transmissions
for efficient use of power and bandwidth. In this work, we consider the problem of scheduling in wireless networks that
exploit the inherent wireless broadcast advantage and employ network coding.
Optimal scheduling with given physical layer constraints is a hard problem for wireless networks with large number of
nodes. In such a scenario, we propose the receiver-selection technique that results in scheduling with manageable
complexity. It is shown analytically that the throughput obtained with the proposed method is equal to the optimal
scheduling throughput asymptotically for large number of runs. Numerical evaluation in test cases such as rectangular
grid networks and random geometric networks illustrates the effectiveness in throughput and complexity of the proposed
method.
All are cordially invited.
Name | : | Prof. Nandita DasGupta |
Venue & Time | : | Seminar Hall (ESB-244), on 14th July 2010 at 3:00 pm |
Title | : | Study of random dopant fluctuation effects in FD SOI MOSFETs and DG FinFETs using analytical models |
Abstract |
Random dopant fluctuation (RDF) causes reliability problem in short channel MOSFETs. RDF results in non-uniform doping in the channel leading to significant deviation in threshold voltage particularly for small geometry devices. The effect of RDF has been computed using the analytical model developed for FD SOI MOSFET with nonuniformly doped channel and this work will be presented in this seminar. For each study, a large sample size has been used. This has been possible owing to the computational efficiency of the analytical model. Studies on the threshold voltage variation due to the combined effects of RDF and other device parameter fluctuations have also been carried out. The solution of 2D Poisson’s equation for nonuniformly doped channel is also applied to a double gate FinFET (DG FinFET) and subthreshold current is computed using this solution. The subthreshold current is used to extract the threshold voltage of DG FinFET. This model is used to study the effect of unintentionally present single dopant in the DG FinFET channel and also RDF induced threshold voltage fluctuations in these devices.
ALL ARE INVITED
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