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The minimum specific on-resistance achievable for a target breakdown voltage for a conventional p-n junction is limited by the unipolar material limit. Super junctions (SJs) were introduced to reduce the specific on-resistance below this limit. We derive material-independent closed-form solutions for the design of both an ideal as well as a practical SJ and illustrate the calculations for materials such as silicon, silicon carbide, gallium nitride, and diamond. The commercialization of SJ in silicon carbide material has been problematic due to the p-pillar fabrication difficulty. We propose Charge Sheet Super-junction (CSSJ) as a viable alternative to SJ in silicon carbide material as it eliminates the need for fabricating p-pillars while achieving up to 45 % lower specific on-resistance than SJ. We also derive analytical equations for the design of CSSJ for breakdown voltage in the range of 100 V to 10 kV.