Date : 12 February 2019 (Tuesday)
Time : 04.00 p.m.
Venue : ESB 234 (Malaviya Hall)
Speaker : Pradeep Dasari (EE14D216)
Guides : Dr. Shreepad Karmalkar
The on-state DC current – voltage characteristics of Gallium Nitride High Electron Mobility Transistors are influenced by bias dependence of four quantities: mobility, saturation velocity of channel electrons, parasitic source / drain resistances and channel length modulation. We propose a simple technique of incorporating these four effects in analytical simulations. The technique involves augmenting an analytical drain current model with one curve-fit equation having qualitatively correct behavior for each of the above four bias dependencies. A method of extracting all these bias dependencies from measured data is proposed.
All are cordially invited