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Simulation of On-state DC Drain Current Behaviour of Gallium Nitride High Electron Mobility Transistors

February 12 @ 4:00 pm - 5:00 pm

Date                : 12 February 2019 (Tuesday)

Time               : 04.00 p.m.

Venue             : ESB 234 (Malaviya Hall)

Speaker          : Pradeep Dasari (EE14D216)

Guides            : Dr. Shreepad Karmalkar

 

ABSTRACT

 

The on-state DC current – voltage characteristics of Gallium Nitride High Electron Mobility Transistors are influenced by bias dependence of four quantities: mobility, saturation velocity of channel electrons, parasitic source / drain resistances and channel length modulation. We propose a simple technique of incorporating these four effects in analytical simulations. The technique involves augmenting an analytical drain current model with one curve-fit equation having qualitatively correct behavior for each of the above four bias dependencies. A method of extracting all these bias dependencies from measured data is proposed.

All are cordially invited

Details

Date:
February 12
Time:
4:00 pm - 5:00 pm
Event Category:
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