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Mechanism and Enhancement of the Breakdown Voltage in Gallium Nitride High Electron Mobility Transistors

July 26 @ 3:00 pm - 4:00 pm

Date                : 26 July 2019 (Fri)

Time               : 03.00p.m.

Venue             : ESB 244

Speaker          : B Prasannanjaneyulu (EE15D033)

Guide              : Dr. ShreepadKarmalkar




Gallium Nitride High Electron Mobility Transistors show a hard and high breakdown of several tens of volts under deep OFF-state gate bias but much less soft breakdown of just a few tens of volts for near-threshold OFF-state conditions. The hard breakdown is known to be due to impact ionization.We establish that the low and soft breakdown is due to space-charge-limited-current from drain to source via the gallium nitride buffer having deep traps. We determine the density and energy level of traps using numerical simulation. We point out the differences in the physics underlying two techniques of enhancing breakdown, namely – field plate connected to the gate and high-k passivation over the barrier layer. Using numerical simulations of practical device structures, we show that, while both these techniques can be equally effective at higher breakdown voltages, the high-k passivation is less effective at lower breakdown voltages.

All are cordially invited.


July 26
3:00 pm - 4:00 pm
Event Category:


ESB – 244
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