Venue – CSD 308
Date and Time – 14th June 2019 (Friday) at 4 PM
Speaker – Dibakar Yadav (EE14D019)
Guide – Dr. Deleep R Nair
Mobility enhancement by the application of uniaxial stress has been widely used by the semiconductor industry to increase the drive current of MOSFETs since 90nm node. However, this aggravates the problem of Direct Source to Drain Tunneling (SDT) at transistor channel lengths below 10 nm. Materials with higher carrier mobility (lower effective mass) are more susceptible to this kind of leakage current. SDT can become a major roadblock in the integration of non-Silicon channel materials in the future generation of CMOS devices. It is essential to investigate the performance of alternative channel materials to sustain device scaling and to continue performance improvement over conventional silicon-based CMOS devices. In this work, we investigate the performance of pMOSFETs based on Germanium, Gallium Antimonide, and Germanium-Tin as channel materials, using ballistic quantum transport simulations. We show that, with a proper choice of channel transport orientation, source/drain doping levels and careful device design it is possible to achieve performance improvement over Silicon based devices, down to a channel length of 10 nm. We examine the role of material choice, crystallographic orientation in minimizing SDT and to improve transistor performance at scaled gate lengths.