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Heteroepitaxy of InP on Si and Buried Heterostructure Quantum Cascade Lasers

July 17, 2015 @ 3:00 pm - 5:00 pm

Speaker: Prof. Sebastian Lourdudoss, KTH, Sweden

The seminar consists of two parts. The first part deals with heteroepitaxy of InP on Si. Combination of III-V semiconductor based devices on silicon is advantageous for electronics-photonics integration and cost effective solar cells. So far bonding approaches are predominant. Heteroepitaxial approach is more attractive for large scale integration. I will present our approach and some recent results on near laser emission from quantum wells grown on InP on Si and demonstration of direct interface of InP/Si for multijunction solar cells on silicon. The second part deals with buried heterostructure quantum cascade lasers (BH-QCL). I will demonstrate the uniqueness of hydride vapour phase epitaxy (HVPE) in meeting the new demand of fabricating BH-QCLs emiting in the mid-infrared range (3-12 μm) through regrowth of semi-insulating layer around ridges etched down to 10-15 μm deep in less than 45 minutes. The fabricated devices with HR/as cleaved facets emitting at 4.7 μm exhibit an
output power up to ~2.4 W at room temperature and under CW operation with a wall plug efficiency up to 9% while at the same time maintaining spatially monomode, TM00. I also demonstrate HVPE capability to fabricate buried heterostructure photonic crystal QCLs for the first time.
Speaker’s Bio:
Sebastian Lourdudoss obtained M.Sc. in chemistry from (St. Joseph’s College, Trichy) Madras University, India, in 1976 and Ph.D. in chemistry from Faculté Libre des Sciences de Lille, France, in 1979. In 1980 he joined KTH, Stockholm, Sweden, to work on chemical absorption heat pumps and thermochemical energy storage. He changed his field of interest to semiconductors in 1985 when he had moved to Swedish Institute of Microelectronics, where he started to develop epitaxy of compound semiconductors for fabricating optoelectronic devices. In 1993 he moved back to KTH where he is currently a professor in Semiconductor Materials and Head of Department of Materials and Nano Physics. He has contributed to the development of semi-insulating III-V materials including III-nitrides for discrete and/or integrated device fabrication and buried heterostructure lasers for high speed data- and telecom applications. His current interests are integration of III-Vs on silicon and high power buried heterostructure quantum cascade lasers.


July 17, 2015
3:00 pm - 5:00 pm
Event Category:


ESB 244


Bijoy Krishna Das
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