Date and Time- 23rd July (Tuesday) at 4 PM
Venue – ESB 244
Speaker- Pavan CH L N (EE13D038)
Guide: – Dr. Deleep R Nair
Abstract: One of the recent reliability concerns of scaled MOS transistors is Random Telegraph Noise (RTN). It is caused by fluctuations in number and mobility of charge carriers due to discrete traps in the gate insulator stack. It results in performance fluctuation of the device, characterized by threshold voltage fluctuation. Silicon-Germanium (SiGe) has been identified as an alternate channel material to Silicon to obtain lower threshold voltage and higher mobility in PMOS transistors. In this work, reliability of SiGe channel PMOS transistors with focus on single gate insulator trap is investigated. Characterization of RTN and data analysis is carried out, which reveals information about gate oxide traps.
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